Advanced high-K gate dielectric for high-performance short-channel in 0.7Ga0.3as quantum well field effect transistors on silicon substrate for low power logic applications

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2009, Pages

  Radosavljevic, M ^a   Chu Kung, B ^a   Corcoran, S ^a   Dewey, G ^a   Hudait, M K ^a   Fastenau, J M ^b   Kavalieros, J ^a   Liu, W K ^b   Lubyshev, D ^b   Metz, M ^a   Millard, K ^a   Mukherjee, N ^a   Rachmady, W ^a   Shah, U ^a   Chau, Robert ^a  

^a INTEL CORPORATION   (United States)

^b IQE INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ADVANCED COMPOSITES; CARRIER CONFINEMENTS; CARRIER VELOCITY; ELECTRICAL OXIDE THICKNESS; GATE LEAKAGES; HIGH DRIVE CURRENT; HIGH-K GATE DIELECTRICS; HIGH-K GATE STACKS; INP; LOGIC APPLICATIONS; LOW POWER; QUANTUM WELL; QUANTUM WELL FIELD-EFFECT TRANSISTORS; SILICON SUBSTRATES;

DIELECTRIC MATERIALS; ELECTRON DEVICES; ELECTRON MULTIPLIERS; GALLIUM; GATE DIELECTRICS; GATES (TRANSISTOR); LOGIC GATES; SEMICONDUCTOR QUANTUM WELLS;

FIELD EFFECT TRANSISTORS;

EID: 77952371631     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2009.5424361     Document Type: Conference Paper

References (6)

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