-
1
-
-
37549015601
-
-
JESOAN 0013-4651,. 10.1149/1.2806172
-
P. K. Hurley, K. Cherkaoui, É. O'Connor, M. C. Lemme, H. D. B. Gottlob, M. Schmidt, S. Hall, Y. Lu, O. Buiu, B. Raeissi, J. Piscator, O. Engstrom, and S. B. Newcomb, J. Electrochem. Soc. JESOAN 0013-4651 155, G13 (2008). 10.1149/1.2806172
-
(2008)
J. Electrochem. Soc.
, vol.155
, pp. 13
-
-
Hurley, P.K.1
Cherkaoui, K.2
O'Connor, É.3
Lemme, M.C.4
Gottlob, H.D.B.5
Schmidt, M.6
Hall, S.7
Lu, Y.8
Buiu, O.9
Raeissi, B.10
Piscator, J.11
Engstrom, O.12
Newcomb, S.B.13
-
3
-
-
62549095943
-
-
APPLAB 0003-6951,. 10.1063/1.3089688
-
É. O'Connor, S. Monaghan, R. D. Long, A. O'Mahony, I. M. Povey, K. Cherkaoui, M. E. Pemble, G. Brammertz, M. Heyns, S. B. Newcomb, V. V. Afanas'ev, and P. K. Hurley, Appl. Phys. Lett. APPLAB 0003-6951 94, 102902 (2009). 10.1063/1.3089688
-
(2009)
Appl. Phys. Lett.
, vol.94
, pp. 102902
-
-
O'Connor, É.1
Monaghan, S.2
Long, R.D.3
O'Mahony, A.4
Povey, I.M.5
Cherkaoui, K.6
Pemble, M.E.7
Brammertz, G.8
Heyns, M.9
Newcomb, S.B.10
Afanas'Ev, V.V.11
Hurley, P.K.12
-
4
-
-
33750198688
-
2 gate dielectric grown by atomic-layer deposition
-
DOI 10.1063/1.2363959
-
N. Goel, P. Majhi, C. O. Chui, W. Tsai, D. Choi, and J. S. Harris, Appl. Phys. Lett. APPLAB 0003-6951 89, 163517 (2006). 10.1063/1.2363959 (Pubitemid 44601757)
-
(2006)
Applied Physics Letters
, vol.89
, Issue.16
, pp. 163517
-
-
Goel, N.1
Majhi, P.2
Chui, C.O.3
Tsai, W.4
Choi, D.5
Harris, J.S.6
-
5
-
-
38349175640
-
-
APPLAB 0003-6951,. 10.1063/1.2829586
-
É. O'Connor, R. D. Long, K. Cherkaoui, K. K. Thomas, F. Chalvet, I. M. Povey, M. E. Pemble, P. K. Hurley, B. Brennan, G. Hughes, and S. B. Newcomb, Appl. Phys. Lett. APPLAB 0003-6951 92, 022902 (2008). 10.1063/1.2829586
-
(2008)
Appl. Phys. Lett.
, vol.92
, pp. 022902
-
-
O'Connor, É.1
Long, R.D.2
Cherkaoui, K.3
Thomas, K.K.4
Chalvet, F.5
Povey, I.M.6
Pemble, M.E.7
Hurley, P.K.8
Brennan, B.9
Hughes, G.10
Newcomb, S.B.11
-
6
-
-
67349274971
-
-
MIENEF 0167-9317,. 10.1016/j.mee.2009.03.117
-
W. Tsai, N. Goel, S. Koveshnikov, P. Majhi, and W. Wang, Microelectron. Eng. MIENEF 0167-9317 86, 1540 (2009). 10.1016/j.mee.2009.03.117
-
(2009)
Microelectron. Eng.
, vol.86
, pp. 1540
-
-
Tsai, W.1
Goel, N.2
Koveshnikov, S.3
Majhi, P.4
Wang, W.5
-
7
-
-
34249022099
-
2 on deep trenched and planar silicon
-
DOI 10.1016/j.mee.2007.04.035, PII S0167931707003851, INFOS 2007
-
K. Kukli, J. Niinistö, A. Tamm, J. Lu, M. Ritala, M. Leskelä, M. Putkonen, L. Niinistö, F. Song, P. Williams, and P. N. Heys, Microelectron. Eng. MIENEF 0167-9317 84, 2010 (2007). 10.1016/j.mee.2007.04.035 (Pubitemid 46783932)
-
(2007)
Microelectronic Engineering
, vol.84
, Issue.9-10
, pp. 2010-2013
-
-
Kukli, K.1
Niinisto, J.2
Tamm, A.3
Lu, J.4
Ritala, M.5
Leskela, M.6
Putkonen, M.7
Niinisto, L.8
Song, F.9
Williams, P.10
Heys, P.N.11
-
9
-
-
1042298583
-
-
MIGIEA 0927-796X,. 10.1016/j.mser.2003.12.002
-
D. P. Norton, Mater. Sci. Eng. R. MIGIEA 0927-796X 43, 139 (2004). 10.1016/j.mser.2003.12.002
-
(2004)
Mater. Sci. Eng. R.
, vol.43
, pp. 139
-
-
Norton, D.P.1
-
10
-
-
58149503735
-
-
EDLEDZ 0741-3106,. 10.1109/LED.2008.2007579
-
M. Passlack, R. Droopad, P. Fejes, and L. Wang, IEEE Electron Device Lett. EDLEDZ 0741-3106 30, 2 (2009). 10.1109/LED.2008.2007579
-
(2009)
IEEE Electron Device Lett.
, vol.30
, pp. 2
-
-
Passlack, M.1
Droopad, R.2
Fejes, P.3
Wang, L.4
-
11
-
-
4243136628
-
-
PPSBAP 0370-1301,. 10.1088/0370-1301/63/3/302
-
T. S. Moss, Proc. Phys. Soc. London, Sect. B PPSBAP 0370-1301 63, 167 (1950). 10.1088/0370-1301/63/3/302
-
(1950)
Proc. Phys. Soc. London, Sect. B
, vol.63
, pp. 167
-
-
Moss, T.S.1
-
12
-
-
0042341502
-
-
APPLAB 0003-6951,. 10.1063/1.1590743
-
P. D. Ye, G. D. Wilk, B. Yang J. Kwo, S. N. G. Chu, S. Nakahara, H. -J. L. Gossmann, J. P. Mannaerts, M. Hong, K. K. Ng, and J. Bude, Appl. Phys. Lett. APPLAB 0003-6951 83, 180 (2003). 10.1063/1.1590743
-
(2003)
Appl. Phys. Lett.
, vol.83
, pp. 180
-
-
Ye, P.D.1
Wilk, G.D.2
Yang, B.3
Kwo, J.4
Chu, S.N.G.5
Nakahara, S.6
Gossmann, H.-J.L.7
Mannaerts, J.P.8
Hong, M.9
Ng, K.K.10
Bude, J.11
-
13
-
-
20844440321
-
3 gate dielectrics on GaAs grown by atomic layer deposition
-
DOI 10.1063/1.1899745, 152904
-
M. M. Frank, G. D. Wilk, D. Starodub, T. Gustafsson, E. Garfunkel, Y. J. Chabal, J. Grazul, and D. A. Miller, Appl. Phys. Lett. APPLAB 0003-6951 86, 152904 (2005). 10.1063/1.1899745 (Pubitemid 40861439)
-
(2005)
Applied Physics Letters
, vol.86
, Issue.15
, pp. 1-3
-
-
Frank, M.M.1
Wilk, G.D.2
Starodub, D.3
Gustafsson, T.4
Garfunkel, E.5
Chabal, Y.J.6
Grazul, J.7
Muller, D.A.8
-
14
-
-
39749157907
-
GaAs interfacial self-cleaning by atomic layer deposition
-
DOI 10.1063/1.2883956
-
C. L. Hinkle, A. M. Sonnet, E. M. Vogel, S. McDonnell, G. J. Hughes, M. Milojevic, B. Lee, F. S. Aguirre-Tostado, K. J. Choi, H. C. Kim, J. Kim, and R. M. Wallace, Appl. Phys. Lett. APPLAB 0003-6951 92, 071901 (2008). 10.1063/1.2883956 (Pubitemid 351304840)
-
(2008)
Applied Physics Letters
, vol.92
, Issue.7
, pp. 071901
-
-
Hinkle, C.L.1
Sonnet, A.M.2
Vogel, E.M.3
McDonnell, S.4
Hughes, G.J.5
Milojevic, M.6
Lee, B.7
Aguirre-Tostado, F.S.8
Choi, K.J.9
Kim, H.C.10
Kim, J.11
Wallace, R.M.12
-
15
-
-
64549101193
-
-
ESLEF6 1099-0062,. 10.1149/1.3109624
-
B. Brennan, M. Milojevic, H. C. Kim, P. K. Hurley, J. Kim, G. Hughes, and R. M. Wallace, Electrochem. Solid-State Lett. ESLEF6 1099-0062 12, H205 (2009). 10.1149/1.3109624
-
(2009)
Electrochem. Solid-State Lett.
, vol.12
, pp. 205
-
-
Brennan, B.1
Milojevic, M.2
Kim, H.C.3
Hurley, P.K.4
Kim, J.5
Hughes, G.6
Wallace, R.M.7
-
16
-
-
77955719353
-
-
eV, Δ Ec =1.5 eV. InP/ In0.53 Ga0.47 As thickness/doping as specified. Temperature=300 K.
-
eV, Δ Ec =1.5 eV. InP/ In0.53 Ga0.47 As thickness/doping as specified. Temperature=300 K.
-
-
-
-
18
-
-
70350104952
-
-
JAPIAU 0021-8979,. 10.1063/1.3236637
-
F. Crupi, G. Giusi, G. Iannaccone, P. Magnone, C. Pace, E. Simoen, and C. Claeys, J. Appl. Phys. JAPIAU 0021-8979 106, 073710 (2009). 10.1063/1.3236637
-
(2009)
J. Appl. Phys.
, vol.106
, pp. 073710
-
-
Crupi, F.1
Giusi, G.2
Iannaccone, G.3
Magnone, P.4
Pace, C.5
Simoen, E.6
Claeys, C.7
-
19
-
-
70450227486
-
-
APPLAB 0003-6951,. 10.1063/1.3267104
-
G. Brammertz, H. -C. Lin, M. Caymax, M. Meuris, M. Heyns, and M. Passlack, Appl. Phys. Lett. APPLAB 0003-6951 95, 202109 (2009). 10.1063/1.3267104
-
(2009)
Appl. Phys. Lett.
, vol.95
, pp. 202109
-
-
Brammertz, G.1
Lin, H.-C.2
Caymax, M.3
Meuris, M.4
Heyns, M.5
Passlack, M.6
-
20
-
-
77955741775
-
-
APPLAB 0003-6951,. 10.1063/1.3436645
-
T. P. O'Regan, P. K. Hurley, B. Soŕe, and M. V. Fischetti, Appl. Phys. Lett. APPLAB 0003-6951 96, 213514 (2010). 10.1063/1.3436645
-
(2010)
Appl. Phys. Lett.
, vol.96
, pp. 213514
-
-
O'Regan, T.P.1
Hurley, P.K.2
Soŕe, B.3
Fischetti, M.V.4
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