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Volumn 97, Issue 5, 2010, Pages

Structural and electrical analysis of the atomic layer deposition of HfO2/n-In0.53Ga0.47 As capacitors with and without an Al2O3 interface control layer

Author keywords

[No Author keywords available]

Indexed keywords

BREAKDOWN VOLTAGE; CHANNEL MOBILITY; DEVICE-SCALING; ELECTRICAL ANALYSIS; HIGH MOBILITY; HIGH-K OXIDES; INTERFACE CONTROL LAYER; INTERFACE QUALITY; INTERFACE STATE; NATIVE OXIDES; SCALING TRENDS; SELF-CLEANING EFFECTS; STRUCTURE IMPROVEMENT;

EID: 77955733860     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3473773     Document Type: Article
Times cited : (55)

References (21)
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    • MIGIEA 0927-796X,. 10.1016/j.mser.2003.12.002
    • D. P. Norton, Mater. Sci. Eng. R. MIGIEA 0927-796X 43, 139 (2004). 10.1016/j.mser.2003.12.002
    • (2004) Mater. Sci. Eng. R. , vol.43 , pp. 139
    • Norton, D.P.1
  • 11
    • 4243136628 scopus 로고
    • PPSBAP 0370-1301,. 10.1088/0370-1301/63/3/302
    • T. S. Moss, Proc. Phys. Soc. London, Sect. B PPSBAP 0370-1301 63, 167 (1950). 10.1088/0370-1301/63/3/302
    • (1950) Proc. Phys. Soc. London, Sect. B , vol.63 , pp. 167
    • Moss, T.S.1
  • 16
    • 77955719353 scopus 로고    scopus 로고
    • eV, Δ Ec =1.5 eV. InP/ In0.53 Ga0.47 As thickness/doping as specified. Temperature=300 K.
    • eV, Δ Ec =1.5 eV. InP/ In0.53 Ga0.47 As thickness/doping as specified. Temperature=300 K.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.