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Volumn 97, Issue 5, 2010, Pages

Structural and electrical analysis of the atomic layer deposition of HfO2/n-In0.53Ga0.47 As capacitors with and without an Al2O3 interface control layer

(11) O'Mahony, A a Monaghan, S a Provenzano, G a,b Povey, I M a Nolan, M G a O'Connor, E a Cherkaoui, K a Newcomb, S B c Crupi, F b Hurley, P K a Pemble, M E a

a UNIVERSITY COLLEGE CORK (Ireland)

b UNIVERSITY OF CALABRIA (Italy)

c Glebe Scientific Ltd (Ireland)

Author keywords

[No Author keywords available]

Indexed keywords

BREAKDOWN VOLTAGE; CHANNEL MOBILITY; DEVICE-SCALING; ELECTRICAL ANALYSIS; HIGH MOBILITY; HIGH-K OXIDES; INTERFACE CONTROL LAYER; INTERFACE QUALITY; INTERFACE STATE; NATIVE OXIDES; SCALING TRENDS; SELF-CLEANING EFFECTS; STRUCTURE IMPROVEMENT;

ATOMIC LAYER DEPOSITION; GALLIUM; HAFNIUM COMPOUNDS;

ALUMINUM;

EID: 77955733860 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3473773 Document Type: Article

Times cited : (54)

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