Electrical study of sulfur passivated In0.53Ga0.47As MOS capacitor and transistor with ALD Al2O3 as gate insulator

Microelectronic Engineering

Volumn 86, Issue 7-9, 2009, Pages 1554-1557

  Lin, Han Chung ^a   Wang, Wei E ^b   Brammertz, Guy ^a   Meuris, Marc ^a   Heyns, Marc ^a  

^a IMEC   (Belgium)

^b INTEL CORPORATION   (United States)

Author keywords

ALD; III V; InGaAs on InP; Inversion channel; MOSFET; Sulfur treatment

Indexed keywords

ALD; III-V; INGAAS ON INP; INVERSION CHANNEL; MOSFET; SULFUR TREATMENT;

ALUMINUM; CAPACITANCE; CAPACITORS; ELECTRON MOBILITY; MOS CAPACITORS; MOSFET DEVICES; SEMICONDUCTING INDIUM; TRANSISTORS;

SULFUR;

EID: 67349183396     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2009.03.112     Document Type: Article

References (9)

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