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Volumn 97, Issue 4, 2010, Pages

The influences of surface treatment and gas annealing conditions on the inversion behaviors of the atomic-layer-deposition Al2O 3/n-In0.53Ga0.47As metal-oxide-semiconductor capacitor

(11) Trinh, H D a Chang, E Y a Wu, P W a Wong, Y Y a Chang, C T a Hsieh, Y F a Yu, C C b Nguyen, H Q a Lin, Y C a Lin, K L a Hudait, M K c

a NATIONAL CHIAO TUNG UNIVERSITY (Taiwan)

b INSTRUMENT TECHNOLOGY RESEARCH CENTER (Taiwan)

c Virginia Polytechnic Institute and State University (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAPS; C-V CURVE; GAS ANNEALING; HYDROGEN ANNEALING; INTERFACE TRAP STATE; METAL-OXIDE-SEMICONDUCTOR CAPACITORS; NATIVE OXIDES; POST DEPOSITION ANNEALING; STRONG INVERSION; TEMPERATURE INDEPENDENTS; TRIMETHYL ALUMINUMS; X-RAY PHOTOELECTRON SPECTROSCOPY SPECTRA;

ANNEALING; CAPACITORS; HYDROGEN; HYDROGEN SULFIDE; METAL ANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY;

SURFACE TREATMENT;

EID: 77955754972 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3467813 Document Type: Article

Times cited : (111)

References (18)

1
- 30944450630
- 30 October-2 November
- R. Chau, S. Datta, and A. Majumdar, Digest of the IEEE Compound Semiconductor Integrated Circuit Symposium, 30 October-2 November 2005, p. 17.
- (2005) Digest of the IEEE Compound Semiconductor Integrated Circuit Symposium , vol.17
- Chau, R.¹ Datta, S.² Majumdar, A.³

2
- 44849083052
- APPLAB 0003-6951,. 10.1063/1.2931031
- S. Koveshnikov, N. Goel, P. Majhi, H. Wen, M. B. Santos, S. Oktyabrsky, V. Tokranov, R. Kambhampati, R. Moore, F. Zhu, J. Lee, and W. Tsai, Appl. Phys. Lett. APPLAB 0003-6951 92, 222904 (2008). 10.1063/1.2931031
- (2008) Appl. Phys. Lett. , vol.92 , pp. 222904
- Koveshnikov, S.¹ Goel, N.² Majhi, P.³ Wen, H.⁴ Santos, M.B.⁵ Oktyabrsky, S.⁶ Tokranov, V.⁷ Kambhampati, R.⁸ Moore, R.⁹ Zhu, F.¹⁰ Lee, J.¹¹ Tsai, W.¹²

3
- 67650373442
- EDLEDZ 0741-3106,. 10.1109/LED.2009.2022346
- Y. Q. Wu, W. K. Wang, O. Koybasi, D. N. Zakharov, E. A. Stach, S. Nakahara, J. Hwang, and P. D. Ye, IEEE Electron Device Lett. EDLEDZ 0741-3106 30, 700 (2009). 10.1109/LED.2009.2022346
- (2009) IEEE Electron Device Lett. , vol.30 , pp. 700
- Wu, Y.Q.¹ Wang, W.K.² Koybasi, O.³ Zakharov, D.N.⁴ Stach, E.A.⁵ Nakahara, S.⁶ Hwang, J.⁷ Ye, P.D.⁸

4
- 77955758442
- TDIMD5 0163-1918, 0.
- G. Dewey, R. Kotlyar, R. Pillarisetty, M. Radosavljevic, T. Rakshit, H. Then, and R. Chau, Tech. Dig.-Int. Electron Devices Meet. TDIMD5 0163-1918 2009, 0 20.2.1.
- Tech. Dig. - Int. Electron Devices Meet. , vol.2009 , pp. 2021
- Dewey, G.¹ Kotlyar, R.² Pillarisetty, R.³ Radosavljevic, M.⁴ Rakshit, T.⁵ Then, H.⁶ Chau, R.⁷

5
- 70350059170
- APPLAB 0003-6951,. 10.1063/1.3249577
- C. L. Hinkle, M. Milojevic, E. M. Vogel, and R. M. Wallace, Appl. Phys. Lett. APPLAB 0003-6951 95, 151905 (2009). 10.1063/1.3249577
- (2009) Appl. Phys. Lett. , vol.95 , pp. 151905
- Hinkle, C.L.¹ Milojevic, M.² Vogel, E.M.³ Wallace, R.M.⁴

6
- 67349183396
- MIENEF 0167-9317,. 10.1016/j.mee.2009.03.112
- H. -C. Lin, W. -E. Wang, G. Brammertz, M. Meuris, and M. Heyns, Microelectron. Eng. MIENEF 0167-9317 86, 1554 (2009). 10.1016/j.mee.2009.03.112
- (2009) Microelectron. Eng. , vol.86 , pp. 1554
- Lin, H.-C.¹ Wang, W.-E.² Brammertz, G.³ Meuris, M.⁴ Heyns, M.⁵

7
- 69049116282
- APPLAB 0003-6951,. 10.1063/1.3204465
- R. Engel-Herbert, Y. Hwang, J. Cagnon, and S. Stemmer, Appl. Phys. Lett. APPLAB 0003-6951 95, 062908 (2009). 10.1063/1.3204465
- (2009) Appl. Phys. Lett. , vol.95 , pp. 062908
- Engel-Herbert, R.¹ Hwang, Y.² Cagnon, J.³ Stemmer, S.⁴

8
- 67649213322
- ESLEF6 1099-0062,. 10.1149/1.3139603
- B. Shin, J. Cagnon, R. D. Long, P. K. Hurley, S. Stemmer, and P. C. McIntyre, Electrochem. Solid-State Lett. ESLEF6 1099-0062 12, G40 (2009). 10.1149/1.3139603
- (2009) Electrochem. Solid-State Lett. , vol.12 , pp. 40
- Shin, B.¹ Cagnon, J.² Long, R.D.³ Hurley, P.K.⁴ Stemmer, S.⁵ Mcintyre, P.C.⁶

9
- 62549095943
- APPLAB 0003-6951,. 10.1063/1.3089688
- E. O'Connor, S. Monaghan, R. D. Long, A. O'Mahony, I. M. Povey, K. Cherkaoui, M. E. Pemble, G. Brammertz, M. Heyns, S. B. Newcomb, V. V. Afanas'ev, and P. K. Hurley, Appl. Phys. Lett. APPLAB 0003-6951 94, 102902 (2009). 10.1063/1.3089688
- (2009) Appl. Phys. Lett. , vol.94 , pp. 102902
- O'connor, E.¹ Monaghan, S.² Long, R.D.³ O'mahony, A.⁴ Povey, I.M.⁵ Cherkaoui, K.⁶ Pemble, M.E.⁷ Brammertz, G.⁸ Heyns, M.⁹ Newcomb, S.B.¹⁰ Afanas'ev, V.V.¹¹ Hurley, P.K.¹²

10
- 38349175640
- APPLAB 0003-6951,. 10.1063/1.2829586
- E. O'Connor, R. D. Long, K. Cherkaoui, K. K. Thomas, F. Chalvet, I. M. Povey, M. E. Pemble, P. K. Hurley, B. Brennan, G. Hughes, and S. B. Newcomb, Appl. Phys. Lett. APPLAB 0003-6951 92, 022902 (2008). 10.1063/1.2829586
- (2008) Appl. Phys. Lett. , vol.92 , pp. 022902
- O'connor, E.¹ Long, R.D.² Cherkaoui, K.³ Thomas, K.K.⁴ Chalvet, F.⁵ Povey, I.M.⁶ Pemble, M.E.⁷ Hurley, P.K.⁸ Brennan, B.⁹ Hughes, G.¹⁰ Newcomb, S.B.¹¹

11
- 39749137699
- Atomic-layer-deposited Hf O2 on In0.53 Ga0.47 As: Passivation and energy-band parameters
- DOI 10.1063/1.2883967
- Y. C. Chang, M. L. Huang, K. Y. Lee, Y. J. Lee, T. D. Lin, M. Hong, J. Kwo, T. S. Lay, C. C. Liao, and K. Y. Cheng, Appl. Phys. Lett. APPLAB 0003-6951 92, 072901 (2008). 10.1063/1.2883967 (Pubitemid 351304853)
- (2008) Applied Physics Letters , vol.92 , Issue.7 , pp. 072901
- Chang, Y.C.¹ Huang, M.L.² Lee, K.Y.³ Lee, Y.J.⁴ Lin, T.D.⁵ Hong, M.⁶ Kwo, J.⁷ Lay, T.S.⁸ Liao, C.C.⁹ Cheng, K.Y.¹⁰

12
- 70350728552
- JAPIAU 0021-8979,. 10.1063/1.3243234
- R. D. Long, E. O'Connor, S. B. Newcomb, S. Monaghan, K. Cherkaoui, P. Casey, G. Hughes, K. K. Thomas, F. Chalvet, I. M. Povey, M. E. Pemble, and P. K. Hurley, J. Appl. Phys. JAPIAU 0021-8979 106, 084508 (2009). 10.1063/1.3243234
- (2009) J. Appl. Phys. , vol.106 , pp. 084508
- Long, R.D.¹ O'connor, E.² Newcomb, S.B.³ Monaghan, S.⁴ Cherkaoui, K.⁵ Casey, P.⁶ Hughes, G.⁷ Thomas, K.K.⁸ Chalvet, F.⁹ Povey, I.M.¹⁰ Pemble, M.E.¹¹ Hurley, P.K.¹²

13
- 34548412615
- High-indium-content InGaAs metal-oxide-semiconductor capacitor with amorphous LaAl O3 gate dielectric
- DOI 10.1063/1.2776846
- N. Goel, P. Majhi, W. Tsai, M. Warusawithana, D. G. Schlom, M. B. Santos, J. S. Harris, and Y. Nishi, Appl. Phys. Lett. APPLAB 0003-6951 91, 093509 (2007). 10.1063/1.2776846 (Pubitemid 47352372)
- (2007) Applied Physics Letters , vol.91 , Issue.9 , pp. 093509
- Goel, N.¹ Majhi, P.² Tsai, W.³ Warusawithana, M.⁴ Schlom, D.G.⁵ Santos, M.B.⁶ Harris, J.S.⁷ Nishi, Y.⁸

14
- 63549117403
- APPLAB 0003-6951,. 10.1063/1.3106618
- Y. Hwang, M. A. Wistey, J. Cagnon, R. Engel-Herbert, and S. Stemmer, Appl. Phys. Lett. APPLAB 0003-6951 94, 122907 (2009). 10.1063/1.3106618
- (2009) Appl. Phys. Lett. , vol.94 , pp. 122907
- Hwang, Y.¹ Wistey, M.A.² Cagnon, J.³ Engel-Herbert, R.⁴ Stemmer, S.⁵

15
- 0030216999
- 3-GaAs interfaces for inversion/accumulation device and surface passivation applications
- DOI 10.1016/0038-1101(96)00006-8, PII S0038110196000068
- M. Passlack, M. Hong, and J. P. Mannaerts, Solid-State Electron. SSELA5 0038-1101 39, 1133 (1996). 10.1016/0038-1101(96)00006-8 (Pubitemid 126365367)
- (1996) Solid-State Electronics , vol.39 , Issue.8 , pp. 1133-1136
- Passlack, M.¹ Hong, M.² Mannaerts, J.P.³

16
- 56849122383
- APPLAB 0003-6951,. 10.1063/1.3054348
- M. Milojevic, C. L. Hinkle, F. S. Aguirre-Tostado, H. C. Kim, E. M. Vogel, J. Kim, and R. M. Wallace, Appl. Phys. Lett. APPLAB 0003-6951 93, 252905 (2008). 10.1063/1.3054348
- (2008) Appl. Phys. Lett. , vol.93 , pp. 252905
- Milojevic, M.¹ Hinkle, C.L.² Aguirre-Tostado, F.S.³ Kim, H.C.⁴ Vogel, E.M.⁵ Kim, J.⁶ Wallace, R.M.⁷

17
- 70450227486
- APPLAB 0003-6951,. 10.1063/1.3267104
- G. Brammertz, H. C. Lin, M. Caymax, M. Meuris, M. Heyns, and M. Passlack, Appl. Phys. Lett. APPLAB 0003-6951 95, 202109 (2009). 10.1063/1.3267104
- (2009) Appl. Phys. Lett. , vol.95 , pp. 202109
- Brammertz, G.¹ Lin, H.C.² Caymax, M.³ Meuris, M.⁴ Heyns, M.⁵ Passlack, M.⁶

18
- 0004071496
- (Wiley, New York).
- D. K. Schroder, Semiconductor Material and Device Characterization (Wiley, New York, 2006).
- (2006) Semiconductor Material and Device Characterization
- Schroder, D.K.¹

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