Electron mobility in surface- and buried-channel flatband In 0.53Ga0.47As MOSFETs with ALD Al2O3 gate dielectric

IEEE Electron Device Letters

Volumn 32, Issue 4, 2011, Pages 494-496

  Bentley, Steven J ^a   Holland, Martin ^a   Li, Xu ^a   Paterson, Gary W ^a   Zhou, Haiping ^a   Ignatova, Olesya ^a   MacIntyre, Douglas ^a   Thoms, Stephen ^a   Asenov, Asen ^a   Shin, Byungha ^b,c   Ahn, Jaesoo ^b   McIntyre, Paul C ^b   Thayne, Iain G ^a  

^a UNIVERSITY OF GLASGOW   (United Kingdom)

^b Stanford University   (United States)

^c IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

Atomic layer deposition (ALD); electron mobility; InGaAs; MOSFET

Indexed keywords

ATOMIC LAYER DEPOSITED; CARRIER DENSITY; CHANNEL DEVICE; CHANNEL STRUCTURES; DELTA-DOPED; ELECTRON DENSITIES; FLAT BAND; HETEROSTRUCTURES; HIGH MOBILITY; INGAAS; LOW POWER; MATERIAL SYSTEMS; MOS-FET; MOSFETS; SCALED CMOS;

ATOMIC LAYER DEPOSITION; ATOMS; CARRIER CONCENTRATION; ELECTRON MOBILITY; ELECTRONS; GALLIUM; GATE DIELECTRICS; GATES (TRANSISTOR); MOSFET DEVICES; SEMICONDUCTING INDIUM;

SURFACES;

EID: 79953064474     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2011.2107876     Document Type: Article

References (13)

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