Analysis of the minority carrier response of n-type and p-type Au/Ni/Al2O3/In0.53Ga0.47As/InP capacitors following an optimized (NH4)2S treatment

Applied Physics Letters

Volumn 99, Issue 21, 2011, Pages

  O'Connor, E ^a   Monaghan, S ^a   Cherkaoui, K ^a   Povey, I M ^a   Hurley, P K ^a  

^a UNIVERSITY COLLEGE CORK   (Ireland)

Author keywords

[No Author keywords available]

Indexed keywords

AMMONIUM SULFIDE; ARRHENIUS; ATOMIC LAYER DEPOSITED; CAPACITANCE VOLTAGE; CONDUCTANCE-VOLTAGE MEASUREMENTS; DIFFUSION CONTROLLED; METAL-OXIDE-SEMICONDUCTOR CAPACITORS; MINORITY CARRIER; P-TYPE; VARYING TEMPERATURE;

AMMONIUM COMPOUNDS; CAPACITORS; ELECTRIC PROPERTIES; OPTIMIZATION;

ACTIVATION ENERGY;

EID: 81855213237     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3663535     Document Type: Article

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