Structural and electrical properties of HfO2/n-In xGa1-xAs structures (X: 0, 0.15, 0.3 and 0.53)

ECS Transactions

Volumn 25, Issue 6, 2009, Pages 113-127

  Hurley, P K ^a   O'Connor, E ^a   Monaghan, S ^a   Long, R D ^a   O'Mahony, A ^a   Povey, I M ^a   Cherkaoui, K ^a   MacHale, J ^a   Quinn, A J ^a   Brammertz, G ^b   Heyns, M ^b   Newcomb, S B ^c   Afanas'ev, V V ^d   Sonnet, A M ^e   Galatage, R V ^e   Jivani, M N ^e   Vogel, E M ^e   Wallace, R M ^e   Pemble, M E ^a  

^a UNIVERSITY COLLEGE CORK   (Ireland)

^b IMEC   (Belgium)

^c Glebe Scientific Ltd Newport   (Ireland)

^d UNIVERSITY OF LEUVEN   (Belgium)

^e UNIVERSITY OF TEXAS AT DALLAS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEFECT DENSITY; DIELECTRIC MATERIALS; GALLIUM ARSENIDE; GATE DIELECTRICS; HAFNIUM OXIDES; HIGH-K DIELECTRIC; III-V SEMICONDUCTORS; SEMICONDUCTING GALLIUM; SEMICONDUCTOR ALLOYS; VALENCE BANDS;

CAPACITANCE VOLTAGE; DEFECT ENERGY; FORMING GAS ANNEALING; HIGH DEFECT DENSITIES; INTERFACE DEFECTS; STRUCTURAL AND ELECTRICAL PROPERTIES; SURFACE ACCUMULATION; VALANCE BANDS;

CAPACITANCE;

EID: 70350725864     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.3206612     Document Type: Conference Paper

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