Charged defect quantification in PtAl2O3In 0.53Ga0.47AsInP MOS capacitors

Journal of the Electrochemical Society

Volumn 158, Issue 5, 2011, Pages

  Long, R D ^a,b   Shin, B ^b   Monaghan, S ^a   Cherkaoui, K ^a   Cagnon, J ^c   Stemmer, S ^c   McIntyre, P C ^b   Hurley, P K ^a  

^a UNIVERSITY COLLEGE CORK   (Ireland)

^b Stanford University   (United States)

^c University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITED; BULK OXIDES; CAPACITANCE VOLTAGE MEASUREMENTS; CHARGED DEFECTS; CONTROLLED THICKNESS; DIELECTRIC-SEMICONDUCTOR INTERFACES; FIXED CHARGES; FORMING GAS; FORMING GAS ANNEALING; INTERFACE STATE CHARGE; INTERFACE STATE DENSITY; LOW TEMPERATURES; METAL OXIDE SEMICONDUCTOR; OXIDE CHARGE; P-TYPE; POST-ANNEAL; WORK FOCUS;

DIELECTRIC DEVICES; DIELECTRIC MATERIALS; MOS CAPACITORS;

PHASE INTERFACES;

EID: 79953199803     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3545799     Document Type: Article

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