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Volumn 96, Issue 21, 2010, Pages

Modeling the capacitance-voltage response of In0.53Ga 0.47 As metal-oxide-semiconductor structures: Charge quantization and nonparabolic corrections

(4) O'Regan, T P a Hurley, P K a Sore B b Fischetti, M V c

a UNIVERSITY COLLEGE CORK (Ireland)

b IMEC (Belgium)

c UNIVERSITY OF MASSACHUSETTS (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE VOLTAGE; CAPACITANCE-VOLTAGE CHARACTERISTICS; CHARGE QUANTIZATION; CONTRIBUTING FACTOR; EXPERIMENTAL OBSERVATION; IN0.53GA0.47AS; INTERFACE DEFECTS; INVERSION CHARGE DENSITY; METAL OXIDE SEMICONDUCTOR STRUCTURES; MOS STRUCTURE; OXIDE CAPACITANCE; P-TYPE; SHARP INCREASE; STRONG INVERSION;

DIELECTRIC DEVICES; LANDFORMS; LEAD OXIDE;

CAPACITANCE;

EID: 77955741775 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3436645 Document Type: Article

Times cited : (27)

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