SCOPUS 정보 검색 플랫폼

Applied Surface Science

Volumn 257, Issue 9, 2011, Pages 4082-4090

Optimisation of the ammonium sulphide (NH 4 ) 2 S passivation process on In 0.53 Ga 0.47 As

(6) Brennan, B a Milojevic, M b Hinkle, C L b Aguirre Tostado, F S b Hughes, G a Wallace, R M b

a DUBLIN CITY UNIVERSITY (Ireland)

b The University of Texas at Dallas (United States)

Author keywords

Ammonium sulphide; Chemical passivation; InGaAs; Native oxide; Photoemission; Sulphur passivation; Surface roughness

Indexed keywords

ATOMIC FORCE MICROSCOPY; GALLIUM COMPOUNDS; III-V SEMICONDUCTORS; INTERFACE STATES; INTERFACES (MATERIALS); PASSIVATION; PHOTOEMISSION; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR DEVICES; SULFUR COMPOUNDS; SURFACE ROUGHNESS;

AMMONIUM SULPHIDE; CHEMICAL PASSIVATION; INGAAS; NATIVE OXIDES; SULPHUR PASSIVATION;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 78951478805 PISSN: 01694332 EISSN: None Source Type: Journal
DOI: 10.1016/j.apsusc.2010.11.179 Document Type: Article

Times cited : (79)

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