Low interfacial trap density and sub-nm equivalent oxide thickness in In0.53Ga0.47As (001) metal-oxide-semiconductor devices using molecular beam deposited HfO2/Al2O3 as gate dielectrics

Applied Physics Letters

Volumn 99, Issue 4, 2011, Pages

  Chu, L K ^a,b   Merckling, C ^c   Alian, A ^b,c   Dekoster, J ^c   Kwo, J ^a,d   Hong, M ^a   Caymax, M ^c   Heyns, M ^b,c  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^b UNIVERSITY OF LEUVEN   (Belgium)

^c IMEC   (Belgium)

^d NATIONAL TAIWAN UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

AS INTERFACES; CAPACITANCE VOLTAGE CHARACTERISTIC; CONDUCTANCE MEASUREMENT; EQUIVALENT OXIDE THICKNESS; GATE-LEAKAGE CURRENT; IN-SITU; INP; INTERFACIAL DENSITY; INTERFACIAL TRAPS; METAL OXIDE SEMICONDUCTOR; OXIDE THICKNESS; PASSIVATION LAYER;

ALUMINUM; CAPACITANCE; DIELECTRIC MATERIALS; ELECTRON MOBILITY; GALLIUM ALLOYS; GATES (TRANSISTOR); HAFNIUM OXIDES; LEAKAGE CURRENTS; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; PASSIVATION;

GATE DIELECTRICS;

EID: 79961038335     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3617436     Document Type: Article

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