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Volumn 109, Issue 2, 2011, Pages

A systematic study of (NH4) 2 S passivation (22%, 10%, 5%, or 1%) on the interface properties of the Al2 O3 / In0.53 Ga0.47 As/InP system for n -type and p -type In0.53 Ga0.47 As epitaxial layers

(12) O'Connor, E a Brennan, B b Djara, V a Cherkaoui, K a Monaghan, S a Newcomb, S B c Contreras, R d Milojevic, M e Hughes, G b Pemble, M E a Wallace, R M e Hurley, P K a

a UNIVERSITY COLLEGE CORK (Ireland)

b DUBLIN CITY UNIVERSITY (Ireland)

c Glebe Scientific Ltd (Ireland)

d DEPARTAMENTO DE FÍSICA (Mexico)

e The University of Texas at Dallas (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAPS; C-V METHOD; CAPACITANCE VOLTAGE; CAPACITOR STRUCTURES; CONDUCTANCE METHOD; DELETERIOUS EFFECTS; EXPOSURE-TIME; FREQUENCY DISPERSION; HIGH-K OXIDES; HIGH-LOW FREQUENCY; IN0.53GA0.47AS; INTERFACE PROPERTY; INTERFACE STATE; MULTI FREQUENCY; P-TYPE; PEAK DENSITY; SYSTEMATIC STUDY; VALENCE BAND EDGES;

AMMONIUM COMPOUNDS; ATOMIC LAYER DEPOSITION; DEFECT DENSITY; DEFECTS; GALLIUM;

PASSIVATION;

EID: 79551654686 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3533959 Document Type: Article

Times cited : (144)

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