Bonding principles of passivation mechanism at III-V-oxide interfaces

Applied Physics Letters

Volumn 99, Issue 22, 2011, Pages

  Robertson, J ^a   Lin, L ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER; GAAS; INTERFACE DEFECTS; INTERFACIAL DEFECT; OXIDE GROWTH;

PHYSICAL PROPERTIES; PHYSICS;

DEFECTS;

EID: 82955241265     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3665061     Document Type: Article

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