Temperature and frequency dependent electrical characterization of HfO 2 / InxGa1-xAs interfaces using capacitance-voltage and conductance methods

Applied Physics Letters

Volumn 94, Issue 10, 2009, Pages

  O'Connor, E ^a   Monaghan, S ^a   Long, R D ^a   O'Mahony, A ^a   Povey, I M ^a   Cherkaoui, K ^a   Pemble, M E ^a   Brammertz, G ^b   Heyns, M ^b   Newcomb, S B ^c   Afanas'Ev, V V ^d   Hurley, P K ^a  

^a UNIVERSITY COLLEGE CORK   (Ireland)

^b IMEC   (Belgium)

^c Glebe Scientific Ltd   (Ireland)

^d UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; GALLIUM ALLOYS; HAFNIUM COMPOUNDS; MOS CAPACITORS; PASSIVATION; SEMICONDUCTING GALLIUM;

AS INTERFACES; ATOMIC LAYER DEPOSITED; CAPACITANCE VOLTAGES; CONDUCTANCE METHODS; CONDUCTANCE TECHNIQUES; ELECTRICAL CHARACTERIZATIONS; ELECTRICAL PROPERTIES; FORMING GAS ANNEALING; FREQUENCY DEPENDENTS; FREQUENCY DISPERSIONS; GAAS; INTERFACE STATE; INTERFACE STATE DENSITIES; METAL-OXIDE-SEMICONDUCTOR CAPACITORS; NEGATIVE GATES; POSITIVE GATE BIAS; SURFACE PASSIVATIONS;

EPITAXIAL LAYERS;

EID: 62549095943     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3089688     Document Type: Article

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