1-nm-capacitance-equivalent-thickness HfO 2/Al 2O 3/InGaAs metal-oxide-semiconductor structure with low interface trap density and low gate leakage current density

Applied Physics Letters

Volumn 100, Issue 13, 2012, Pages

  Suzuki, R ^a   Taoka, N ^a   Yokoyama, M ^a   Lee, S ^a   Kim, S H ^a   Hoshii, T ^a   Yasuda, T ^b   Jevasuwan, W ^b   Maeda, T ^b   Ichikawa, O ^c   Fukuhara, N ^c   Hata, M ^c   Takenaka, M ^a   Takagi, S ^a  

^a UNIVERSITY OF TOKYO   (Japan)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^c SUMITOMO CHEMICAL CO LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

C-V CHARACTERISTIC; CAPACITANCE-EQUIVALENT THICKNESS; FREQUENCY DISPERSION; GATE LEAKAGE CURRENT DENSITY; GATE LEAKAGES; INTERFACE PROPERTY; INTERFACE TRAP DENSITY; METAL OXIDE SEMICONDUCTOR STRUCTURES; METAL-OXIDE-SEMICONDUCTOR INTERFACES; ULTRA-THIN;

CAPACITANCE; DIELECTRIC DEVICES; HAFNIUM OXIDES; MOS DEVICES; SEMICONDUCTING INDIUM;

ALUMINUM;

EID: 84859542288     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3698095     Document Type: Article

References (16)

1. S. Takagi, T. Irisawa, T. Tezuka, T. Numata, S. Nakaharai, N. Hirashita, Y. Moriyama, K. Usuda, E. Toyoda, S. Dissanayake, M. Shichijo, R. Nakane, S. Sugahara, M. Takenaka, and N. Sugiyama, IEEE Trans. Elect. Devices 55, 21 (2008). 10.1109/TED.2007.911034
2. P. D. Ye, J. Vac. Sci. Technol. A 26, 697 (2008). 10.1116/1.2905246
3. H. C. Chiu, L. T. Tung, Y. H. Chang, Y. J. Lee, C. C. Chang, J. Kwo, and M. Hong, Appl. Phys. Lett. 93, 202903 (2008). 10.1063/1.3027476
4. E. J. Kim, E. Chagarov, J. Cagnon, Y. Yuan, A. C. Kummel, P. M. Asbeck, S. Stemmer, K. C. Saraswat, and P. C. Mclntyre, J. Appl. Phys. 106, 124508 (2009). 10.1063/1.3266006
5. K. Y. Lee, Y. J. Lee, P. Chang, M. L. Huang, Y. C. Chang, M. Hong, and J. Kwo, Appl. Phys. Lett. 92, 252908 (2008). 10.1063/1.2952826
6. H. Zhao, J. H. Yum, Y. T. Chen, and J. C. Lee, J. Vac. Sci. Technol. B 27, 2024 (2009). 10.1116/1.3125284
7. A. O'Mahony, S. Monaghan, G. Provenzano, I. M. Povey, M. G. Nolan, E. O'Connor, K. Cherkaoui, S. B. Newcomb, F. Crupi, P. K. Hurley, and M. E. Pemble, Appl. Phys. Lett. 97, 052904 (2010). 10.1063/1.3473773
8. S. Monaghan, A. O'Mahony, K. Cherlaoui, E. O'Connor, I. M. Povey, M. G. Nolan, D. O'Connell, M. E. Pemble, and P. K. Hurley, J. Vac. Sci. Technol. B 29, 807 (2011). 10.1116/1.3532826
9. E. J. Kim, L. Wang, P. M. Asbeck, K. C. Saraswat, and P. C. Mclntyre, Appl. Phys. Lett. 96, 012906 (2010). 10.1063/1.3281027
10. N. Taoka, M. Yokoyama, S. H. Kim, R. Suzuki, R. Iida, S. Lee, T. Hoshii, W. Jevasuwan, T. Maeda, T. Yasuda, O. Ichikawa, N. Fukuhara, M. Hata, M. Takenaka, and S. Takagi, in International Electron Devices Meeting (IEDM)., Washington, DC, 5-7 December 2011, p. 610.
11. J. Robertson and L. Lin, Appl. Phys. Lett. 99, 222906 (2011). 10.1063/1.3665061
12. L. M. Terman, Solid State Electron. 5, 285 (1962). 10.1016/0038-1101(62) 90111-9
13. K. Martens, W. Wang, K. De Keersmaecker, G. Borghs, G. Groeseneken, and H. Maes, Microelectron. Eng. 84, 2146 (2007). 10.1016/j.mee.2007.04.039 (Pubitemid 46776960)
14. N. Taoka, M. Yokoyama, S. H. Kim, R. Suzuki, T. Hoshii, R. Iida, S. Lee, Y. Urabe, N. Miyata, T. Yasuda, H. Yamada, N. Fukuhara, M. Hata, M. Takenaka, and S. Takagi, Microelectron. Eng. 88, 1087 (2011). 10.1016/j.mee.2011.03.036
15. S. M. George, Chem. Rev. 110, 111 (2010). 10.1021/cr900056b
16. E. P. Gusev, D. A. Buchanan, E. Cartier, A. Kumar, D. DiMaria, S. Guha, A. Callegari, S. Zafar, P. C. Jamison, D. A. Neumater, M. Copel, M. A. Gribelyuk, H. Okorn-Schmidt, C. D'Emic, P. Kozlowski, K. Chan, N. Bojarczuk, L.-A. Ragnarsson, P. Ronsheim, K. Rim, R. J. Fleming, A. Mocuta, and A. Ajmera, in International Electron Devices Meeting (IEDM), Washington, DC, 3-5 December 2001, p. 451.