Electrical properties of III-V/oxide interfaces

ECS Transactions

Volumn 19, Issue 5, 2009, Pages 375-386

  Brammertz, G ^a   Lin, H C ^a   Martens, K ^a   Alian, A ^a   Merckling, C ^a   Penaud, J ^b   Kohen, D ^a   Wang, W E ^c   Sioncke, S ^a   Delabie, A ^a   Meuris, M ^a   Caymax, M ^a   Heyns, M ^a,d  

^a IMEC   (Belgium)

^b RIBER SA   (France)

^c Intel Corporation Belgium   (Belgium)

^d UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; GALLIUM ARSENIDE; III-V SEMICONDUCTORS; SEMICONDUCTING GALLIUM; SEMICONDUCTOR ALLOYS;

BAND EDGE ENERGY; FREQUENCY DISPERSION; IN0.53GA0.47AS; OXIDE INTERFACES; PASSIVATION TREATMENT; PHYSICAL RELAXATION; STATE DISTRIBUTIONS; VALENCE BAND EDGES;

INTERFACE STATES;

EID: 70450241262     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.3119560     Document Type: Conference Paper

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