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Applied Physics Letters

Volumn 100, Issue 17, 2012, Pages

Realization of high-quality HfO 2 on In 0.53Ga 0.47As by in-situ atomic-layer-deposition

(7) Lin, T D a Chang, Y H b Lin, C A b Huang, M L b Lee, W C b Kwo, J a,b Hong, M a

a NATIONAL TAIWAN UNIVERSITY (Taiwan)

b NATIONAL TSING HUA UNIVERSITY (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

AS INTERFACES; ATOMIC LAYER DEPOSITED; EQUIVALENT OXIDE THICKNESS; HIGH QUALITY; IN-SITU; INTERFACIAL PASSIVATION LAYERS; INTERFACIAL TRAPS; LOW-LEAKAGE CURRENT; METAL-OXIDE-SEMICONDUCTOR CAPACITORS; OXIDE LAYER; PRE-TREATMENTS; RE CRYSTALLIZATIONS; TEMPERATURE DEPENDENT;

ARSENIC; CHARGE COUPLED DEVICES; HAFNIUM OXIDES; MOLECULAR BEAM EPITAXY;

GALLIUM;

EID: 84860349843 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.4706261 Document Type: Article

Times cited : (51)

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