Interface state energy distribution and Pb defects at Si(110)/SiO2 interfaces: Comparison to (111) and (100) silicon orientations

Journal of Applied Physics

Volumn 109, Issue 1, 2011, Pages

  Thoan, N H ^a,b   Keunen, K ^a   Afanas'ev, V V ^a   Stesmans, A ^a  

^a KU LEUVEN   (Belgium)

^b HANOI UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Viet Nam)

Author keywords

[No Author keywords available]

Indexed keywords

AMPHOTERIC BEHAVIOR; CAPACITANCE VOLTAGE; ELECTRICAL METHODS; ELECTRON SPIN RESONANCE MEASUREMENTS; INTERFACE STATE ENERGY DISTRIBUTION; INTERFACE TRAP DENSITY; INTERFACE TRAPS; OXIDATION TEMPERATURE; P-TYPE; SI BAND GAP; SI CRYSTALS; SI(110);

DEFECTS; LEAD; PASSIVATION; SILICA; SILICON OXIDES; SPIN DYNAMICS;

SILICON;

EID: 78751475858     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3527909     Document Type: Article

References (27)

1. J. Moers, Appl. Phys. A: Mater. Sci. Process. 87, 531 (2007).
2. V. D. Kunz, T. Uchino, C. H. de Groot, P. Ashburn, D. C. Donaghy, S. Hall, Y. Wang, and P. L. F. Hemment, IEEE Trans. Electron Devices 50, 1487 (2003).
3. Y. C. Cheng, Prog. Surf. Sci. 8, 181 (1977).
4. T. Satô, Y. Takeishi, H. Hara, and Y. Okamoto, Phys. Rev. B 4, 1950 (1971).
5. L. M. Terman, Solid-State Electron. 5, 285 (1962).
6. P. V. Gray and D. M. Brown, Appl. Phys. Lett. 8, 31 (1966).
7. G. Abowitz, E. Arnold, and J. Ladell, Phys. Rev. Lett. 18, 543 (1967).
8. E. H. Nicollian, M. H. Hanes, and J. R. Brews, IEEE Trans. Electron Devices 20, 380 (1973).
9. E. H. Nicollian, B. Schwartz, D. J. Coleman, R. M. Ryder, and J. R. Brews, J. Vac. Sci. Technol. 13, 873 (1976).
10. E. Arnold and H. Schauer, Appl. Phys. Lett. 32, 333 (1978).
11. S. C. Vitkavage, E. A. Irene, and H. Z. Massoud, J. Appl. Phys. 68, 5262 (1990).
12. M. J. Uren, K. M. Brunson, J. H. Stathis, and E. Cartier, Microelectron. Eng. 36, 219 (1997).
13. Y. G. Fedorenko, V. V. Afanas'ev, and A. Stesmans, Microelectron. Eng. 80, 66 (2005).
14. L. Dobaczewski, S. Bernardini, P. Kruszewski, P. K. Hurley, V. P. Markevich, I. D. Hawkins, and A. R. Peaker, Appl. Phys. Lett. 92, 242104 (2008).
15. A. Stesmans and V. V. Afanas'ev, J. Appl. Phys. 83, 2453 (1998).
16. P. K. Hurley, B. J. O'Sullivan, F. N. Cubaynes, P. A. Stolk, F. P. Widdershoven, and J. H. Das, J. Electrochem. Soc. 149, G194 (2002).
17. Y. G. Fedorenko, L. Truong, V. V. Afanas'ev, and A. Stesmans, Appl. Phys. Lett. 84, 4771 (2004).
18. Y. G. Fedorenko, L. Truong, V. V. Afanas'ev, A. Stesmans, Z. Zhang, and S. A. Campbell, J. Appl. Phys. 98, 123703 (2005).
19. P. K. Hurley, B. J. O'Sullivan, V. V. Afanas'ev, and A. Stesmans, Elec- trochem. Solid-State Lett. 8, G44 (2005).
20. E. H. Poindexter, Semicond. Sci. Technol. 4, 961 (1989).
21. E. H. Nicollian and J. R. Brews, MOS Physics and Technology (Wiley, New York, 2002).
22. C. N. Berglund, IEEE Trans. Electron Devices 13, 701 (1966).
23. T. C. Poon and H. C. Card, J. Appl. Phys. 51, 6273 (1980).
24. A. Stesmans and V. V. Afanas'ev, J. Vac. Sci. Technol. B 16, 3108 (1998).
25. E. H. Poindexter, P. J. Caplan, B. E. Deal, and R. R. Razouk, J. Appl. Phys. 52, 879 (1981).
26. A. Stesmans, Phys. Rev. B 61, 8393 (2000).
27. V. V. Afanas'ev and V. K. Adamchuk, Prog. Surf. Sci. 47, 301 (1994).