Conductance measurements on Pb centers at the (111) Si:SiO2 interface

Journal of Applied Physics

Volumn 80, Issue 7, 1996, Pages 3915-3922

  Uren, M J ^a   Stathis, J H ^b   Cartier, E ^b  

^a DEFENCE SCIENCE AND TECHNOLOGY LABORATORY   (United Kingdom)

^b IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CAPACITANCE MEASUREMENT; CHEMICAL BONDS; CRYSTAL DEFECTS; ELECTRONIC DENSITY OF STATES; FERMI LEVEL; INTEGRATION; INTERFACES (MATERIALS); MOS DEVICES; SEMICONDUCTING SILICON; SILICA; VOLTAGE MEASUREMENT;

BAND BENDING; DANGLING BOND LEVEL; INTERFACES STATES; THERMAL OXIDES; VACUUM ANNEALING;

ELECTRIC RESISTANCE MEASUREMENT;

EID: 0030270348     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.363349     Document Type: Article

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