Nanoscale InGaSb heterostructure membranes on Si substrates for high hole mobility transistors

Nano Letters

Volumn 12, Issue 4, 2012, Pages 2060-2066

  Takei, Kuniharu ^a,b,c   Madsen, Morten ^a,b,c   Fang, Hui ^a,b,c   Kapadia, Rehan ^a,b,c   Chuang, Steven ^a,b,c   Kim, Ha Sul ^a,b,c   Liu, Chin Hung ^e   Plis, E ^d   Nah, Junghyo ^a,b,c   Krishna, Sanjay ^d   Chueh, Yu Lun ^e   Guo, Jing ^f   Javey, Ali ^a,b,c  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^c UNIVERSITY OF CALIFORNIA   (United States)

^d University of New Mexico   (United States)

^e NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^f University of Florida   (United States)

Author keywords

heterojunction; III V on insulator; MOSFETs; two dimensional membranes; XOI

Indexed keywords

BAND ALIGNMENTS; CLADDING LAYER; DOPANT-FREE; EFFECTIVE MOBILITIES; EPITAXIAL LAYER TRANSFERS; HIGH MOBILITY; III-V-ON-INSULATOR; INAS; LOW RESISTANCE; MOBILITY ENHANCEMENT; MOSFETS; NANO SCALE; P-TYPE; PERFORMANCE ENHANCEMENTS; SI SUBSTRATES; SUBTHRESHOLD SWING; SURFACE PASSIVATION; ULTRA-THIN; XOI;

INDIUM ANTIMONIDES; INDIUM ARSENIDE; MESFET DEVICES; NANOTECHNOLOGY; SILICON;

HETEROJUNCTIONS;

ANTIMONY; GALLIUM; INDIUM; NANOMATERIAL; SILICON;

ARTICLE; ARTIFICIAL MEMBRANE; CHEMISTRY; PARTICLE SIZE; POROSITY; SEMICONDUCTOR; SURFACE PROPERTY;

ANTIMONY; GALLIUM; INDIUM; MEMBRANES, ARTIFICIAL; NANOSTRUCTURES; PARTICLE SIZE; POROSITY; SILICON; SURFACE PROPERTIES; TRANSISTORS, ELECTRONIC;

EID: 84859711018     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl300228b     Document Type: Article

References (30)

1. Kim, D.-H.; del Alamo, J. A. IEEE Trans. Electron Devices 2010, 57, 1504-1511
2. Heyns, M.; Tsai, W. MRS Bull. 2009, 34, 485-488
3. Bennett, B. R.; Ancona, M. G.; Boos, J. B. MRS Bull. 2009, 34, 530-536
4. Xuan, Y.; Wu, Y. Q.; Shen, T.; Yang, T.; Ye, P. D. IEDM Tech. Dig. 2007, 637-640
5. Radosavljevic, M.; Chu-Kung, B.; Corcoran, S.; Dewey, G.; Hudait, M. K.; Fastenau, J. M.; Kavalieros, J.; Liu, W. K.; Lubyshev, D.; Metz, M.; Millard, K.; Mukherjee, N.; Rachmady, W.; Shah, U.; Chau, R. IEEE IEDM Tech. Digest 2009, 319-322
6. Balakrishnan, G.; Huang, S. H.; Khoshakhlagh, A.; Jallipalli, A.; Rotella, P.; Amtout, A.; Krishna, S.; Haines, C. P.; Dawson, L. R.; Huffaker, D. L. Electron. Lett. 2006, 42, 350-351
7. Yonezu, H. Semicond. Sci. Technol. 2002, 17, 762-768
8. Nainani, A.; Irisawa, T.; Yuan, Z.; Sun, Y.; Krishnamohan, T.; Reason, M.; Bennett, B. R.; Boos, J. B.; Ancona, M. G.; Nishi, Y.; Saraswat, K. C. IEDM Tech. Dig. 2010, 138-141
9. Bennet, B. R.; Ancona, M. G.; Boos, J. B.; Shanabrook, V. Appl. Phys. Lett. 2007, 91, 042104
10. Xia, L.; Boos, J. B.; Bennett, B. R.; Ancona, M. G.; del Alamo, J. A. Appl. Phys. Lett. 2011, 98, 053505
11. Yoon, J.; Jo, S.; Chun, I. S.; Jung, I.; Kim, H.-S.; Meitl, M.; Menard, E.; Li, X.; Coleman, J. J.; Paik, U.; Rogers, J. A. Nature 2010, 465, 329-333
12. Meitl, M. A.; Zhu, Z.-T.; Kumar, V.; Lee, K. J.; Feng, X.; Huang, Y. Y.; Adesida, I.; Nuzzo, R. G.; Rogers, J. A. Nat. Mater. 2006, 5, 33-38
13. Kim, H.; Brueckner, E.; Song, J.; Li, J.; Kim, S.; Lu, C.; Sulkin, J.; Choquette, K.; Huang, Y.; Nuzzo, R. G.; Rogers, J. A. Proc. Natl. Acad. Sci. U.S.A. 2011, 108, 10072-10077
14. Ko, H.; Takei, K.; Kapadia, R.; Chuang, S.; Fang, H.; Leu, P. W.; Ganapathi, K.; Plis, E.; Kim, H. S.; Chen, S.-Y.; Madsen, M.; Ford, A. C.; Chueh, Y.-L.; Krishna, S.; Salahuddin, S; Javey, A. Nature 2010, 468, 286-289
15. Ford, A. C.; Yeung, C. W.; Chuang, S.; Kim, H. S.; Plis, E.; Krishna, S.; Hu, C.; Javey, A. Appl. Phys. Lett. 2011, 98, 113105
16. Yokoyama, M.; Yasuda, T.; Takagi, H.; Miyata, N.; Urabe, Y.; Ishii, H.; Yamada, H.; Fukuhara, N.; Hata, M.; Sugiyama, M.; Nakano, Y.; Takenaka, M.; Takagi, S. Appl. Phys. Lett. 2010, 96, 142106
17. Madsen, M.; Takei, K.; Kapadia, R.; Fang, H.; Ko, H.; Takahashi, T.; Ford, A. C.; Lee, M. H.; Javey, A. Adv. Mater. 2011, 23, 3115
18. Radosavljevic, M.; Ashley, T.; Andreev, A.; Coomber, S. D.; Dewey, G.; Emeny, M. T.; Fearn, M.; Hayes, D. G.; Hilton, K. P.; Hudait, M. K.; Jefferies, R.; Martin, T.; Pillarisetty, R.; Rachmady, W.; Rakshit, T.; Smith, S. J.; Uren, M. J.; Wallis, D. J.; Wilding, P. J.; Chau, R. IEDM Tech. Dig. 2008, 1-4
19. Vizbaras, K.; Torpe, M.; Arafin, S.; Amann, M.-C. Semicond. Sci. Technol. 2011, 26, 075021
20. Mizuno, T.; Takagi, S.; Sugiyama, N.; Satake, H.; Kurobe, A.; Toriumi, A. IEEE Electron Device Lett. 2000, 21 (5) 230-232
21. Pillarisetty, R.; Chu-Kung, B.; Corcoran, S.; Dewey, G.; Kavalieros, J.; Kennel, H.; Kotlyar, R.; Le, V.; Lionberger, D.; Metz, M.; Mukherjee, N.; Nah, J.; Rachmady, W.; Radosavljevic, M.; Shah, U.; Taft, S.; Then, H.; Zelick, N.; Chau, R. IEDM Tech. Dig. 2010, 150-153
22. Takei, K.; Fang, H.; Kumar, S. B.; Kapadia, R.; Gao, Q.; Madsen, M.; Kim, H. S.; Liu, C.-H.; Chueh, Y.-L.; Plis, E.; Krishna, S.; Bechtel, H. A.; Guo, J.; Javey, A. Nano Lett. 2011, 11, 5008-5012
23. Xia, F.; Perebeinos, V.; Lin, Y.; Wu, Y.; Avouris, P. Nat. Nanotechnol. 2011, 6, 179-184
24. Chueh, Y.-L.; Ford, A. C.; Ho, J. C.; Jacobson, Z. A.; Fan, Z.; Chen, C.-Y.; Chou, L.-J.; Javey, A. Nano Lett. 2008, 8, 4528-4533
25. Zborowski, J. T.; Fan, W. C.; Golding, T. D.; Vigliante, A.; Chow, P. C.; Shih, H. D.; Anthony, J. M. J. Appl. Phys. 1992, 71, 5908-5912
26. Colingea, J. P.; Flandre, D.; Van de Wielea, F. Solid-State Electron. 1994, 37, 289-294
27. Xu, M.; Wang, R.; Ye, P. D. IEEE Electron Devices Lett. 2011, 32, 883-885
28. Nainani, A.; Irisawa, T.; Yuan, Z.; Bennet, B. R.; Brad Boos, J.; Nishi, Y.; Saraswat, K. C. IEEE Trans. Electron Devices 2011, 58, 3407-3415
29. Nicollian, E. H.; Goetzberger, A. Appl. Phys. Lett. 1967, 10, 60-63
30. Rogers, J. A. Nature 2010, 468, 177-178