Si(100)-SiO2 interface properties following rapid thermal processing

Journal of Applied Physics

Volumn 89, Issue 7, 2001, Pages 3811-3820

  O'Sullivan, B J ^a   Hurley, P K ^a   Leveugle, C ^b   Das, J H ^c  

^a UNIVERSITY COLLEGE CORK   (Ireland)

^b ANALOG DEVICES   (Ireland)

^c STEAG RTP Systems   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035310067     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1343897     Document Type: Article

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