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Volumn 11, Issue 6, 2008, Pages

Growth of high-dielectric-constant TiO2 films in capacitors with RuO2 electrodes

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITION; PERMITTIVITY; TEMPERATURE MEASUREMENT; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY;

EID: 42349100301     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2898184     Document Type: Article
Times cited : (76)

References (12)
  • 1
    • 0037233037 scopus 로고    scopus 로고
    • SSREDI 0167-5729 10.1016/S0167-5729(02)00100-0.
    • U. Diebold, Surf. Sci. Rep. SSREDI 0167-5729 10.1016/S0167-5729(02)00100- 0, 48, 53 (2003).
    • (2003) Surf. Sci. Rep. , vol.48 , pp. 53
    • Diebold, U.1
  • 2
    • 42349098869 scopus 로고    scopus 로고
    • International Technology Roadmafor Semiconductors, ed.
    • International Technology Roadmap for Semiconductors, 2006 ed., http://public.itrs.net/.
    • (2006)
  • 5
    • 30944454290 scopus 로고    scopus 로고
    • THSFAP 0040-6090 10.1016/j.tsf.2005.07.121.
    • G. T. Lim and D.-H. Kim, Thin Solid Films THSFAP 0040-6090 10.1016/j.tsf.2005.07.121, 498, 254 (2006).
    • (2006) Thin Solid Films , vol.498 , pp. 254
    • Lim, G.T.1    Kim, D.-H.2
  • 9
    • 0034187380 scopus 로고    scopus 로고
    • JVTBD9 1071-1023 10.1116/1.591472.
    • J. Robertson, J. Vac. Sci. Technol. B JVTBD9 1071-1023 10.1116/1.591472, 18, 1785 (2000).
    • (2000) J. Vac. Sci. Technol. B , vol.18 , pp. 1785
    • Robertson, J.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.