Controlled growth of rutile TiO2 by atomic layer deposition on oxidized ruthenium

Physica Status Solidi - Rapid Research Letters

Volumn 5, Issue 1, 2011, Pages 19-21

  Popovici, Mihaela ^a   Swerts, Johan ^a   Tomida, Kazuyuki ^a   Radisic, Dunja ^a   Kim, Min Soo ^a   Kaczer, Ben ^a   Richard, Olivier ^a   Bender, Hugo ^a   Delabie, Annelies ^a   Moussa, Alain ^a   Vrancken, Christa ^a   Opsomer, Karl ^a   Franquet, Alexis ^a   Pawlak, Malgorzata A ^a   Schaekers, Marc ^a   Altimime, Laith ^a   Van Elshocht, Sven ^a   Kittl, Jorge A ^a  

^a IMEC   (Belgium)

Author keywords

Atomic layer deposition; High k dielectrics; Rutile TiO2

Indexed keywords

BOTTOM ELECTRODES; CONTROLLED GROWTH; ELECTRICAL EVALUATIONS; ELECTRICAL PROPERTY; EQUIVALENT OXIDE THICKNESS; HIGH-K DIELECTRIC; METAL PRECURSOR; PROTECTIVE LAYERS; RUTILE PHASE; RUTILE TIO; RUTILE TIO2; TIO;

ATOMIC LAYER DEPOSITION; ATOMS; DIELECTRIC MATERIALS; ELECTRIC PROPERTIES; ELECTRODES; ETCHING; LEAD OXIDE; OXIDANTS; PLATINUM; RUTHENIUM; RUTHENIUM ALLOYS; RUTHENIUM COMPOUNDS; TITANIUM; TITANIUM DIOXIDE;

OXIDE MINERALS;

EID: 78650994161     PISSN: 18626254     EISSN: 18626270     Source Type: Journal    
DOI: 10.1002/pssr.201004462     Document Type: Article

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