A detailed understanding of the electronic bipolar resistance switching behavior in Pt/TiO2/Pt structure

Nanotechnology

Volumn 22, Issue 25, 2011, Pages

  Kim, Kyung Min ^a   Choi, Byung Joon ^a   Lee, Min Hwan ^a   Kim, Gun Hwan ^a   Song, Seul Ji ^a   Seok, Jun Yeong ^a   Yoon, Jeong Ho ^a   Han, Seungwu ^a   Hwang, Cheol Seong ^a  

^a Seoul National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ASYMMETRIC POTENTIAL; BIAS POLARITY; CONDUCTION MECHANISM; HIGH-RESISTANCE STATE; RESISTANCE SWITCHING; SPACE-CHARGE-LIMITED; SWITCHING PERFORMANCE; TRAP DENSITY; TRAP LAYERS; TRAP SITES;

NUCLEAR PHYSICS; PLATINUM;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 79956084549     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/22/25/254010     Document Type: Article

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