Electrical properties of TiO2-based MIM capacitors deposited by TiCl4 and TTIP based atomic layer deposition processes

Microelectronic Engineering

Volumn 88, Issue 7, 2011, Pages 1514-1516

  Hudec, Boris ^a   Hušeková, Kristína ^a   Tarre, Aivar ^b   Han, Jeong Hwan ^c   Han, Sora ^c   Rosová, Alica ^a   Lee, Woongkyu ^c   Kasikov, Aarne ^b   Song, Seul Ji ^c   Aarik, Jaan ^b   Hwang, Cheol Seong ^c   Fröhlich, Karol ^a  

^a INSTITUTE OF ELECTRICAL ENGINEERING   (Slovakia)

^b UNIVERSITY OF TARTU   (Estonia)

^c Seoul National University   (South Korea)

Author keywords

Al doped; Al doping; Capacitors; Dielectric; DRAM; Dynamic random access memory; EOT; High ; Leakage current; Metal insulator metal; MIM; RuO2; TiO2

Indexed keywords

AL-DOPED; AL-DOPING; DIELECTRIC; DYNAMIC RANDOM ACCESS MEMORY; EOT; METAL INSULATOR METALS; MIM; RUO2; TIO;

ALUMINUM; ATOMIC LAYER DEPOSITION; DYNAMIC RANDOM ACCESS STORAGE; ELECTRIC PROPERTIES; METAL INSULATOR BOUNDARIES; METALS; MIM DEVICES; RUTHENIUM ALLOYS; RUTHENIUM COMPOUNDS; SEMICONDUCTOR INSULATOR BOUNDARIES; TITANIUM DIOXIDE; TRANSMISSION ELECTRON MICROSCOPY;

ELECTROLYTIC CAPACITORS;

EID: 79958036736     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2011.03.059     Document Type: Conference Paper

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