Resistance switching characteristics of TiO2 thin films prepared with reactive sputtering

Electrochemical and Solid-State Letters

Volumn 12, Issue 7, 2009, Pages

  Hsiung, Chang Po ^a   Gan, Jon Yiew ^a   Tseng, Shih Hao ^a   Tai, Nyan Hwa ^a   Tzeng, Pei Jer ^b   Lin, Cha Hsin ^b   Chen, Frederick ^b   Tsai, Ming Jinn ^b  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^b INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CONCENTRATION OF; CONDUCTIVE CHANNELS; LOW-RESISTANCE STATE; RESISTANCE SWITCHING; SWITCHING BEHAVIORS; TIO;

CELL MEMBRANES; SOLVENTS;

CONDUCTIVE FILMS;

EID: 69149086933     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3122742     Document Type: Article

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