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Journal of Applied Physics

Volumn 109, Issue 10, 2011, Pages

The unification of filament and interfacial resistive switching mechanisms for titanium dioxide based memory devices

(7) Zhang, F a Li, X M a Gao, X D a Wu, L a Cao, X a Liu, X J b Yang, R c

a SHANGHAI INSTITUTE OF CERAMICS (China)

b Gwangju Institute of Science and Technology (GIST) (South Korea)

c NATIONAL INSTITUTE FOR MATERIALS SCIENCE (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CONDUCTION MECHANISM; HIGH-RESISTANCE STATE; LOW-RESISTANCE STATE; OHMIC CONDUCTION; RESISTANCE STATE; RESISTIVE SWITCHING; RESISTIVE SWITCHING MECHANISMS; SCHOTTKY BARRIERS; SWITCHING MECHANISM; TEMPERATURE DEPENDENCE; UNIFIED MODEL;

PLATINUM; SCHOTTKY BARRIER DIODES; TITANIUM; TITANIUM DIOXIDE;

SWITCHING SYSTEMS;

EID: 79958858749 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3583669 Document Type: Conference Paper

Times cited : (19)

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