Rutile-type TiO2 thin film for high-k gate insulator

Thin Solid Films

Volumn 424, Issue 2, 2003, Pages 224-228

  Kadoshima, Masaru ^a   Hiratani, Masahiko ^a   Shimamoto, Yasuhiro ^a   Torii, Kazuyoshi ^a   Miki, Hiroshi ^a   Kimura, Shinichiro ^a   Nabatame, Toshihide ^a  

^a HITACHI LTD   (Japan)

Author keywords

Crystallization; Interface; Oxidation; Titanium oxide

Indexed keywords

ANNEALING; CRYSTALLIZATION; GATES (TRANSISTOR); INTERFACES (MATERIALS); LEAKAGE CURRENTS; MAGNETRON SPUTTERING; OXIDATION; PERMITTIVITY; SINTERING; TITANIUM DIOXIDE;

GATE INSULATORS;

THIN FILMS;

EID: 0344193517     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(02)01105-7     Document Type: Article

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