Oxygen ion drifted bipolar resistive switching behaviors in TiO2-Al electrode interfaces

Thin Solid Films

Volumn 518, Issue 15, 2010, Pages 4408-4411

  Do, Young Ho ^a   Kwak, June Sik ^a   Bae, Yoon Cheol ^a   Jung, Kyooho ^b   Im, Hyunsik ^b   Hong, Jin Pyo ^a  

^a Hanyang University   (South Korea)

^b Dongguk University   (South Korea)

Author keywords

Auger electron spectroscopy; Current Voltage Measurements; Electrode interface; Nonvolatile memory; Redox reaction; Titanium dioxide

Indexed keywords

AL ELECTRODE; CURRENT LEVELS; CURRENT-VOLTAGE MEASUREMENTS; ELECTRODE INTERFACE; ION MIGRATION; LAYER INTERFACES; NON-VOLATILE MEMORIES; NONVOLATILE MEMORY; REDOX PROPERTY; RESISTIVE SWITCHING; RESISTIVE SWITCHING BEHAVIORS; RUTILE TIO; TIO;

ALUMINUM; AUGERS; OXIDE MINERALS; OXYGEN; PLATINUM; REDOX REACTIONS; SWITCHING; SWITCHING SYSTEMS; TITANIUM; TITANIUM DIOXIDE; VOLTAGE MEASUREMENT;

AUGER ELECTRON SPECTROSCOPY;

EID: 77953126797     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2010.01.016     Document Type: Article

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