Ru and RuO2 gate electrodes for advanced CMOS technology

Materials Science and Engineering: B

Volumn 109, Issue 1-3, 2004, Pages 117-121

  Frohlich K ^a   Husekova, K ^a   Machajdik, D ^a   Hooker, J C ^b   Perez, N ^b   Fanciulli, M ^c   Ferrari, S ^c   Wiemer, C ^c   Dimoulas, A ^d   Vellianitis, G ^d   Roozeboom, F ^b  

^a INSTITUTE OF ELECTRICAL ENGINEERING   (Slovakia)

^b PHILIPS RESEARCH LABORATORIES   (Netherlands)

^c LABORATORIO MDM   (Italy)

^d INSTITUTE OF MATERIALS SCIENCE   (Greece)

Author keywords

Metal organic chemical vapour deposition; Metal oxide semiconductor structures; Oxides; Thermal stability

Indexed keywords

CHEMICAL VAPOR DEPOSITION; ELECTRODES; MOLECULAR BEAM EPITAXY; RAPID THERMAL ANNEALING; RUTHENIUM COMPOUNDS; SECONDARY ION MASS SPECTROMETRY; THERMODYNAMIC STABILITY; X RAY DIFFRACTION ANALYSIS;

GATE ELECTRODES; METAL GATE ELECTRODE FILMS; METAL OXIDE SEMICONDUCTOR STRUCTURES;

CMOS INTEGRATED CIRCUITS;

EID: 2342483744     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2003.10.061     Document Type: Conference Paper

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