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Journal of Vacuum Science and Technology B

Volumn 29, Issue 1, 2011, Pages

Atomic layer deposition grown metal-insulator-metal capacitors with RuO2 electrodes and Al-doped rutile TiO2 dielectric layer

(9) Hudec, B a Husekova K a Dobrocka E a Aarik, J b Rammula, R b Kasikov, A b Tarre, A b Vincze, A c Frohlich K a

a INSTITUTE OF ELECTRICAL ENGINEERING (Slovakia)

b UNIVERSITY OF TARTU (Estonia)

c INTERNATIONAL LASER CENTER (Slovakia)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; ATOMIC LAYER DEPOSITION; DYNAMIC RANDOM ACCESS STORAGE; ELECTRODES; HIGH-K DIELECTRIC; METAL INSULATOR BOUNDARIES; MIM DEVICES; OXIDE MINERALS; SEMICONDUCTOR INSULATOR BOUNDARIES; TITANIUM DIOXIDE;

CAPACITANCE DENSITY; DIELECTRIC LAYER; DOPED SAMPLE; DYNAMIC RANDOM ACCESS MEMORY; LEAKAGE CURRENT ANALYSIS; METAL INSULATOR METAL CAPACITOR (MIM); METAL-INSULATOR-METAL STRUCTURES; SCHOTTKY EMISSIONS;

RUTHENIUM COMPOUNDS;

EID: 79551632246 PISSN: 21662746 EISSN: 21662754 Source Type: Journal
DOI: 10.1116/1.3534023 Document Type: Conference Paper

Times cited : (16)

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