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Volumn 158, Issue 4, 2011, Pages

Dependence of the switching characteristics of resistance random access memory on the type of transition metal oxide; TiO2, ZrO2, and HfO2

(15) Kim, Wan Gee a Sung, Min Gyu a Kim, Sook Joo a Yoo, Jong Hee a Youn, Te One a Oh, Jang Won a Kim, Jung Nam a Gyun, Byung Gu a Kim, Taeh Wan a Kim, Chi Ho a Byun, Jun Young a Kim, Won a Joo, Moon Sig a Roh, Jae Sung a Park, Sung Ki a

a Hynix Semiconductor Inc (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLINITIES; ELECTRICAL PROPERTY; FORMING PROCESS; HEAT OF FORMATION; INITIAL RESISTANCE; LOW CURRENTS; LOW-PARASITIC; MEMRISTOR; RESISTANCE RANDOM ACCESS MEMORY; RETENTION CHARACTERISTICS; SWITCHING CHARACTERISTICS; SWITCHING CURRENTS; TIO; TRANSITION-METAL OXIDES; VOLTAGE OPERATIONS;

ELECTRIC PROPERTIES; HAFNIUM COMPOUNDS; METALLIC COMPOUNDS; OXYGEN; OXYGEN VACANCIES; RANDOM ACCESS STORAGE; THERMOCHEMISTRY; TITANIUM NITRIDE; TRANSITION METALS; ZIRCONIUM ALLOYS;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 79955138841 PISSN: 00134651 EISSN: None Source Type: Journal
DOI: 10.1149/1.3552701 Document Type: Article

Times cited : (12)

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