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Volumn 99, Issue 2, 2011, Pages

Improvement in the leakage current characteristic of metal-insulator-metal capacitor by adopting RuO2 film as bottom electrode

(8) Han, Jeong Hwan a Han, Sora a Lee, Woongkyu a Lee, Sang Woon a Kim, Seong Keun a Gatineau, Julien b Dussarrat, Christian b Hwang, Cheol Seong a

a Seoul National University (South Korea)

b AIR LIQUIDE (France)

Author keywords

[No Author keywords available]

Indexed keywords

BOTTOM ELECTRODES; CAPACITOR VOLTAGES; CURRENT CHARACTERISTIC; CURRENT PROPERTIES; DYNAMIC RANDOM ACCESS MEMORY; EQUIVALENT OXIDE THICKNESS; HIGH DIELECTRIC CONSTANTS; HIGH WORK FUNCTION; INTERFACIAL EFFECTS; METAL-INSULATOR-METAL CAPACITORS; TIO;

ALUMINUM; CAPACITORS; DYNAMIC RANDOM ACCESS STORAGE; ELECTRIC PROPERTIES; LEAKAGE CURRENTS; METAL INSULATOR BOUNDARIES; RUTHENIUM COMPOUNDS; TITANIUM DIOXIDE;

RUTHENIUM ALLOYS;

EID: 79960496419 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3609875 Document Type: Article

Times cited : (68)

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