Preferential orientation of high permittivity TiO2 deposited on Si wafers by an IBAD technique

Surface and Coatings Technology

Volumn 158-159, Issue , 2002, Pages 573-576

  Yokota, Katsuhiro ^a   Nakamura, Kazuhiro ^a   Yano, Yoshinori ^a   Miyashita, Fumiyoshi ^a  

^a KANSAI UNIVERSITY   (Japan)

Author keywords

IBAD; Permittivity; Preferred orientation; Titanium oxide

Indexed keywords

ION BEAM ASSISTED DEPOSITION; MICROWAVES; PERMITTIVITY; SUBSTRATES; TITANIUM OXIDES;

PREFERENTIAL ORIENTATION;

SILICON WAFERS;

TITANIUM OXIDE;

EID: 17144435109     PISSN: 02578972     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0257-8972(02)00310-9     Document Type: Article

References (18)