Oxygen migration in TiO2-based higher-k gate stacks

Journal of Applied Physics

Volumn 107, Issue 5, 2010, Pages

  Kim, Sangbum ^a,b   Brown, Stephen L ^a   Rossnagel, Stephen M ^a   Bruley, John ^a   Copel, Matthew ^a   Hopstaken, Marco J P ^a   Narayanan, Vijay ^a   Frank, Martin M ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

^b Stanford University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ANNEALING; CHANNEL INTERFACE; DOPANT ACTIVATION; GATE STACKS; HIGH-TEMPERATURE ANNEALING; INTER-DIFFUSION; METAL-OXIDE; OXYGEN BARRIERS; OXYGEN MIGRATION; PLASMA-ENHANCED ATOMIC LAYER DEPOSITION; POLY-SI; SILICON-CAPACITOR; TI SPUTTERING; TIN GATES; TIN METAL GATE; TIO; TITANIUM ISOPROPOXIDE;

CAPACITANCE; GATE DIELECTRICS; GATES (TRANSISTOR); HAFNIUM COMPOUNDS; LOGIC GATES; OXYGEN; PHYSICAL VAPOR DEPOSITION; PLASMA DEPOSITION; POLYSILICON; SILICON COMPOUNDS; SILICON OXIDES; TITANIUM; TITANIUM NITRIDE; TITANIUM OXIDES;

OXIDE FILMS;

EID: 77949705894     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3298454     Document Type: Article

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