TiO2-based metal-insulator-metal structures for future DRAM storage capacitors

ECS Transactions

Volumn 50, Issue 13, 2013, Pages 79-87

  Frohlich K ^a   Hudec, B ^a   Tapajna M ^a   Husekova K ^a   Rosova A ^a   Elias P ^a   Aarik, J ^b   Rammula, R ^b   Kasikov, A ^b   Arroval, T ^b   Aarik, L ^b   Murakami, K ^c   Rommel, M ^d   Bauer, A J ^d  

^a INSTITUTE OF ELECTRICAL ENGINEERING   (Slovakia)

^b UNIVERSITY OF TARTU   (Estonia)

^c UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

^d FRAUNHOFER INSTITUTE FOR INTEGRATED SYSTEMS AND DEVICE TECHNOLOGY IISB   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM COMPOUNDS; ATOMIC LAYER DEPOSITION; ATOMS; DYNAMIC RANDOM ACCESS STORAGE; LEAKAGE CURRENTS; METAL INSULATOR BOUNDARIES; OXIDE MINERALS; RUTHENIUM COMPOUNDS; STRONTIUM TITANATES; TITANIUM DIOXIDE;

BOTTOM ELECTRODES; CURRENT DISTRIBUTION; DRAM TECHNOLOGY; EQUIVALENT OXIDE THICKNESS; HIGH DIELECTRIC CONSTANTS; LOW-LEAKAGE CURRENT; METAL-INSULATOR-METAL STRUCTURES; STORAGE CAPACITOR;

HIGH-K DIELECTRIC;

EID: 84885300313     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/05013.0079ecst     Document Type: Conference Paper

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