Designed self-doped titanium oxide thin films for efficient visible-light photocatalysis

Advanced Materials

Volumn 14, Issue 19, 2002, Pages 1399-1402

  Justicia, I ^a   Ordejon P ^a   Canto, G ^a   Mozos, J L ^a   Fraxedas, J ^a   Battiston, G A ^a   Gerbasi, R ^b   Figueras, A ^a  

^a INSTITUT DE CIÈNCIA DE MATERIALS DE BARCELONA ICMAB CSIC   (Spain)

^b ICIS CNR   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CALCULATIONS; CATALYSTS; ELECTRON ENERGY LEVELS; INTERFEROMETRY; LIGHT; MORPHOLOGY; OXYGEN; PHOTOCATALYSIS; PHOTODEGRADATION; SURFACE ROUGHNESS; THIN FILMS;

LASER INTERFEROMETRY; PHOTOCARRIERS; PHOTOCATALYST; PHOTOCATALYTIC PROPERTIES; TITANIA;

TITANIUM OXIDES;

EID: 0037010170     PISSN: 09359648     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-4095(20021002)14:19<1399::AID-ADMA1399>3.0.CO;2-C     Document Type: Article

References (23)

1. A. Mills, S. Le Hante, J. Photochem. Photobiol., A 1997, 108, 1.
2. A. Linsebigler, G. Lu, J. T. Yates, Chem. Rev. 1995, 95, 735.
3. J. Engweiler, J. Harf, A. Baiker, J. Catal. 1996, 159, 259.
4. S. P. Fen, Chin. Sci. Bull. 1999, 43, 1613.
5. S. K. Poznyak, D. Talapin, A. Kulak, J. Phys. Chem. B 2001, 105, 4816.
6. R. Asahi, T. Morikawa; T. Ohwaki, K. Aoki, Y. Taga, Science 2001, 293, 269.
7. V. S. Teodorescu, M. G. Blanchin, C. Garapon, C. Champeaux, J. Mater. Sci. 1999, 34, 5469.
8. Y. Wang, H. Cheng, Y. Hao, J. Mater. Sci. Lett. 1999, 18 127.
9. J. Moon, H. Takagi, Y. Fujishiro, M. Awano, J. Mater. Sci. 2001, 36, 949.
10. Y. Wang, H. Humin, M. Yanzhong, L. Jiminy, W. Li, C. Shangmin, J. Mater. Sci. 1999, 34, 3721.
11. J. M. Herrmann, H. Tahiri, Y. Ait-Ichou, Appl. Catal., B 1997, 13, 219.
12. W. Choi, J. Phys. Chem. 1994, 98, 13 669.
13. H. Yamashita, M. Harada, J. Misaka, M. Takeuchi, Y. Ichihashi, F. Goto, M. Ishida, T. Sasaki, M. Anpo, J. Synchrotron Radiat. 2001, 8, 569.
14. D. C. Cronemeyer, Phys. Rev. 1959, 113, 1222.
15. M. P. Lozano, J. Fraxedas, Surf. Interface Anal. 2000, 30, 623.
16. G. K. Boschloo, A. Goossens, J. Schoonman, J. Electrochem Soc. 1997, 144, 1311.
17. D. Sanchez-Portal, E. Artacho, P. Ordejon, J. M. Soler, Int. J. Quant. Chem. 1999, 65, 453.
18. E. Artacho, D. Sanchez-Portal, P. Ordejon, A. Garcia, J. M. Soler, Phys. Status Solidi B 1999, 215, 809.
19. P. J. D. Lindan, N. M. Harrison, M. J. Gillan, J. A. White, Phys. Rev. B 1997, 55, 15 919.
20. G. Canto, J. L. Mozos, P. Ordejón, unpublished.
21. 2 bandgap. This could, in principle, also affect the position of the defect levels with respect to the band edges. However, these states are largely originated from the conduction bands of the host material. Therefore, their position with respect to the conduction band edge will be essentially correct in our calculation, since the correlation to the LDA energy levels will be similar for the defect states as for the band states. This was demonstrated for InN by C. Stampfl, C. van de Walle, D. Vogel, P. Kroger, J. Pollman, Phys. Rev. B 2000, 61, R7846.
22. R. G. Brekenridge, W. R. Hosler, Phys. Rev. 1953, 91, 793.
23. G. A. Battiston, R. Gerbasi, M. Porchia, L. Rizzo, Chem. Vap. Deposition 1999, 5, 13.