The mechanism for the suppression of leakage current in high dielectric TiO2 thin films by adopting ultra-thin HfO2 films for memory application

Journal of Applied Physics

Volumn 110, Issue 2, 2011, Pages

  Seo, Minha ^a   Ho Rha, Sang ^a   Keun Kim, Seong ^a   Hwan Han, Jeong ^a   Lee, Woongkyu ^a   Han, Sora ^a   Seong Hwang, Cheol ^a  

^a Seoul National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE DENSITY; CURRENT BEHAVIORS; ELECTRICAL LEAKAGE; ELECTRON TRANSPORT; INTERFACIAL POTENTIAL; LEAKAGE MECHANISM; MEMORY APPLICATIONS; POTENTIAL BARRIER HEIGHT; QUANTUM MECHANICAL; TIO; TRANSPORT SIMULATION; ULTRA-THIN;

ATOMIC LAYER DEPOSITION; DEFECT DENSITY; HAFNIUM OXIDES; NUCLEAR PHYSICS; OXIDE MINERALS; QUANTUM CHEMISTRY; QUANTUM THEORY; TITANIUM DIOXIDE;

LEAKAGE CURRENTS;

EID: 79961104784     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3605527     Document Type: Article

References (24)

1. C. S. Hwang, S. O. Park, C. S. Kang, H. J. Cho, H. K. Kang, S. I. Lee, and M. Y. Lee, Appl. Phys. Lett. 67, 2819 (1995). 10.1063/1.114795
2. S. W. Lee, O. S. Kwon, J. H. Han, and C. S. Hwang, Appl. Phys. Lett. 92, 222903 (2008). 10.1063/1.2939102
3. S. K. Kim, S. W. Lee, J. H. Han, B. Lee, S. W. Han, and C. S. Hwang, Adv. Funct. Mater. 20, 2989 (2010). 10.1002/adfm.201000599
4. S. K. Kim, W.-D. Kim, K.-M. Kim, C. S. Hwang, and J. Jeong, Appl. Phys. Lett. 85, 4112 (2004). 10.1063/1.1812832
5. S. K. Kim, G.-J. Choi, S. Y. Lee, M. Seo, S. W. Lee, J. H. Han, H.-S. Ahn, S. Han, and C. S. Hwang, Adv. Mater. 20, 1429 (2008). 10.1002/adma.v20:8
6. G.-J. Choi, S. K. Kim, S.-J. Won, H. J. Kim, and C. S. Hwang, J. Electrochem. Soc. 156, G138 (2009). 10.1149/1.3169516
7. G. Mattioli, F. Filippone, P. Alippi, and A. Amore Bonapasta, Phys. Rev. B 78, 241201 (R) (2008). 10.1103/PhysRevB.78.241201
8. S. Wendt, P. T. Sprunger, E. Lira, G. K. H. Madsen, Z. Li, J. Hansen, J. Matthiesen, A. Blekinge-Rasmussen, E. Lgsgaard, B. Hammer, and F. Besenbacher, Science 320, 1755 (2008). 10.1126/science.1159846
9. J. Niinist, K. Kukli, M. Heikkil, M. Ritala, and M. Leskel, Adv. Eng. Mater. 11, 223 (2009). 10.1002/adem.200800316
10. C. L. Hinkle, C. Fulton, R. J. Nemanich, and G. Lukovsky, Microelectron. Eng. 72, 257 (2004). 10.1016/j.mee.2003.12.047
11. M. Seo, S. K. Kim, J. H. Han, and C. S. Hwang, Chem. Mater. 22, 4419 (2010). 10.1021/cm1010289
12. M. Seo, Y.-S. Min, S. K. Kim, T. J. Park, J. H. Kim, K. D. Na, and C. S. Hwang, J. Mater. Chem. 18, 4324 (2008). 10.1039/b806382f
13. B. Jonsson and S. T. Eng, IEEE J. Quantum Electron. 26, 2025 (1990). 10.1109/3.62122
14. R. Tsu and L. Esaki, Appl. Phys. Lett. 22, 562 (1973). 10.1063/1.1654509
15. M. M. Islam, T. Bredow, and A. Gerson, Phys. Rev. 76, 045217 (2007). 10.1103/PhysRevB.76.045217
16. J. C. Shin, J. Park, C. S. Hwang, and H. J. Kim, J. Appl. Phys. 86, 506 (1999). 10.1063/1.370759
17. V. Heine, Phys. Rev. 138, A1689 (1965). 10.1103/PhysRev.138.A1689
18. C. S. Hwang, J. Appl. Phys. 92, 432 (2002). 10.1063/1.1483105
19. B. T. Lee and C. S. Hwang, Appl. Phys. Lett. 77, 124 (2000). 10.1063/1.126897
20. M. Stengel and N. A. Spaldin, Nature 443, 679 (2006). 10.1038/nature05148
21. J. H. Jang, H.-S. Jung, J. H. Kim, S. Y. Lee, C. S. Hwang, and M. Kim, J. Appl. Phys. 109, 023718 (2011). 10.1063/1.3544039
22. Z. A. Weinberg, J. Appl. Phys. 53, 5052 (1982). 10.1063/1.331336
23. T. W. Hickmott, J. Appl. Phys. 97, 104505 (2005). 10.1063/1.1897490
24. J. X. Zheng, G. Ceder, T. Maxisch, W. K. Chim, and W. K. Choi, Phys. Rev. B 75, 104112 (2007). 10.1103/PhysRevB.75.104112