Growth of RuO2 thin films by liquid injection atomic layer deposition

Thin Solid Films

Volumn 518, Issue 16, 2010, Pages 4701-4704

  Husekova K ^a   Dobrocka E ^a   Rosova A ^a   Soltys J ^a   Satka A ^b   Fillot, F ^c   Frohlich K ^a  

^a INSTITUTE OF ELECTRICAL ENGINEERING   (Slovakia)

^b INTERNATIONAL LASER CENTER   (Slovakia)

^c CEA LETI   (France)

Author keywords

ALD; Conducting oxide; MOCVD; Thin oxide films

Indexed keywords

ALD; CONDUCTING OXIDES; DEPOSITION PROCESS; LIQUID INJECTIONS; MOCVD; ROOM TEMPERATURE; SECONDARY ION MASS SPECTROSCOPY; SMOOTH SURFACE; THIN OXIDE FILMS;

ATOMIC LAYER DEPOSITION; CARBON FILMS; CONDUCTIVE FILMS; DEPOSITION; LIQUIDS; RUTHENIUM ALLOYS; RUTHENIUM COMPOUNDS; SECONDARY ION MASS SPECTROMETRY;

OXIDE FILMS;

EID: 77955603938     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2009.12.063     Document Type: Conference Paper

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