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Applied Physics A: Materials Science and Processing

Volumn 102, Issue 4, 2011, Pages 1009-1013

Transition of metallic and insulating Ti sub-oxides in bipolar resistive switching TiOx/TiOy frameworks due to oxygen vacancy drifts

(6) Bae, Yoon Cheol a Lee, Ah Rahm a Kwak, June Sik a Im, Hyunsik b Do, Young Ho c Hong, Jin Pyo a

a Hanyang University (South Korea)

b Dongguk University (South Korea)

c Korea Institute of Science and Technology (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BI-LAYER; HIGH-RESISTANCE STATE; HOMO-JUNCTIONS; ION CONTENT; LOW RESISTANCE; MEMORY WINDOW; OXYGEN CONTENT; OXYGEN IONS; OXYGEN-POOR; RESISTIVE SWITCHING; TIO;

GIANT MAGNETORESISTANCE; IONS; METALLIC COMPOUNDS; OXYGEN; PHASE INTERFACES; PHOTOELECTRON SPECTROSCOPY; SWITCHING SYSTEMS; X RAY PHOTOELECTRON SPECTROSCOPY;

OXYGEN VACANCIES;

EID: 79959361877 PISSN: 09478396 EISSN: 14320630 Source Type: Journal
DOI: 10.1007/s00339-011-6289-0 Document Type: Article

Times cited : (24)

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