Amorphous silicon thin-film transistors on steel foil substrates

IEEE Electron Device Letters

Volumn 17, Issue 12, 1996, Pages 578-580

  Theiss, S D ^a   Wagner, S ^a,b  

^a Princeton University   (United States)

^b IEEE

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CURRENTS; FABRICATION; METAL FOIL; SEMICONDUCTOR DEVICE STRUCTURES; STAINLESS STEEL; SUBSTRATES;

MECHANICAL SHOCK; ON OFF CURRENT RATIO; STAINLESS STEEL FOIL;

THIN FILM TRANSISTORS;

EID: 0030403279     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.545776     Document Type: Article

References (8)

1. D. M. Moffatt, "Glass substrates for flat-panel displays." MRS Bull., vol. 21, pp. 31-34, 1996.
2. H. Okaniwa and K. Nakatani, "Flexible substrate solar cells." in JARECT vol. 6. Amorphous Semiconductor Technologies and Devices Y. Hamakawa, Ed. Tokyo: Ohusha, 1983, pp. 239-250.
3. A. Stein, A. Liss, W. Dintinger, J. Rosedale, C. Hester, "Plastic LCD substrates that combine optical quality and high use temperature." in SID Int. Symp. Dig. Applications Papers, Santa Ana, CA, 1996, vol. XXVII, pp. 11-14.
4. P. Nath and M. Izu, "Performance of large area amorphous Si-based single and multiple junction solar cells," in Conf. Rec. 18th IEEE Photovoltaic Specialist Conf.. Las Vegas, NV, Oct. 21-25, 1985, p. 939.
5. See, for example, Y. Kuo, "Reactive ion etching of plasma enhanced chemical vapor deposition amorphous silicon and silicon nitride: Feeding gas effects," J. Vac. Sci. Technol., vol. A8, pp. 1702-1705, 1990.
6. S. M. Sze, Semiconductor Devices. New York: Wiley. 1985, p. 206.
7. M. Gupta, V. K. Rathi, R. Thangaraj, O. P. Agnihotri, and K. S. Chari, "The preparation, properties and applications of silicon nitride thin films deposited by plasma-enhanced chemical vapor deposition." Thin Solid Films, vol. 204, pp. 77-106, 1991.
8. S. Sherman, Princeton Univ., private communication.