SCOPUS 정보 검색 플랫폼

Volumn 14, Issue 6, 2011, Pages

Direct observation of hole current in amorphous oxide semiconductors under illumination

(7) Chung, Yoon Jang a Kim, Jeong Hwan a Kim, Un Ki a Cho, Deok Yong b Jung, Hyung Suk a Jeong, Jae Kyeong c Hwang, Cheol Seong a

a Seoul National University (South Korea)

b Seoul National University (South Korea)

c Inha University (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS OXIDE SEMICONDUCTORS; AT-WAVELENGTH; DIRECT OBSERVATION; GATE INSULATOR; HOLE BARRIER; HOLE CURRENT; HOLE GENERATION; NEGATIVE BIAS; OXIDE SEMICONDUCTOR; TEMPERATURE STRESS; THRESHOLD VOLTAGE SHIFTS; THRESHOLD WAVELENGTHS; TWO-STACK;

SILICON NITRIDE; THRESHOLD VOLTAGE;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 79953787561 PISSN: 10990062 EISSN: None Source Type: Journal
DOI: 10.1149/1.3567027 Document Type: Article

Times cited : (14)

References (19)

1
- 38649107109
- Amorphous oxide channel TFTs
- DOI 10.1016/j.tsf.2007.03.161, PII S0040609007004014
- H. Kumomi, K. Nomura, T. Kamiya, and H. Hosono, Thin Solid Films, 516, 1516 (2008). 10.1016/j.tsf.2007.03.161 (Pubitemid 351172370)
- (2008) Thin Solid Films , vol.516 , Issue.7 , pp. 1516-1522
- Kumomi, H.¹ Nomura, K.² Kamiya, T.³ Hosono, H.⁴

2
- 43049114999
- 10.1016/j.jnoncrysol.2007.10.071
- H. Hosono, K. Nomura, Y. Ogo, T. Uruga, and T. Kamiya, J. Non-Cryst. Solids, 354, 2796 (2008). 10.1016/j.jnoncrysol.2007.10.071
- (2008) J. Non-Cryst. Solids , vol.354 , pp. 2796
- Hosono, H.¹ Nomura, K.² Ogo, Y.³ Uruga, T.⁴ Kamiya, T.⁵

3
- 34548684568
- High performance thin film transistors with cosputtered amorphous indium gallium zinc oxide channel
- DOI 10.1063/1.2783961
- J. K. Jeong, J. H. Jeong, H. W. Yang, J. S. Park, Y.-G. Mo, and H. D. Kim, Appl. Phys. Lett., 91, 113505 (2007). 10.1063/1.2783961 (Pubitemid 47416041)
- (2007) Applied Physics Letters , vol.91 , Issue.11 , pp. 113505
- Jeong, J.K.¹ Jeong, J.H.² Yang, H.W.³ Park, J.-S.⁴ Mo, Y.-G.⁵ Kim, H.D.⁶

4
- 9744248669
- Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
- DOI 10.1038/nature03090
- K. Nomura, H. Ohta, A. Takagi, T. Kamiya, M. Hirano, and H. Hosono, Nature (London), 432, 25 (2004). 10.1038/nature03090 (Pubitemid 39585210)
- (2004) Nature , vol.432 , Issue.7016 , pp. 488-492
- Nomura, K.¹ Ohta, H.² Takagi, A.³ Kamiya, T.⁴ Hirano, M.⁵ Hosono, H.⁶

5
- 61349167819
- 10.4218/etrij.09.0208.0266
- J. Shin, J. Lee, C. Hwang, S. K. Park, W. Cheong, M. Ryu, C. Byun, J. Lee, and H. Y. Chu, ETRI J., 31, 62 (2009). 10.4218/etrij.09.0208.0266
- (2009) ETRI J. , vol.31 , pp. 62
- Shin, J.¹ Lee, J.² Hwang, C.³ Park, S.K.⁴ Cheong, W.⁵ Ryu, M.⁶ Byun, C.⁷ Lee, J.⁸ Chu, H.Y.⁹

6
- 71949092733
- 10.1063/1.3272015
- K. Lee, J. S. Jung, K. S. Son, J. S. Park, T. S. Kim, R. Choi, J. K. Jeong, J. Kwon, B. Koo, and S. Lee, Appl. Phys. Lett., 95, 232106 (2009). 10.1063/1.3272015
- (2009) Appl. Phys. Lett. , vol.95 , pp. 232106
- Lee, K.¹ Jung, J.S.² Son, K.S.³ Park, J.S.⁴ Kim, T.S.⁵ Choi, R.⁶ Jeong, J.K.⁷ Kwon, J.⁸ Koo, B.⁹ Lee, S.¹⁰

7
- 77954325555
- 10.1063/1.3435482
- J. S. Park, T. S. Kim, K. S. Son, K. Lee, W. Maeng, H. Kim, E. S. Kim, K. Park, J. Seon, W. Choi, Appl. Phys. Lett., 96, 262109 (2010). 10.1063/1.3435482
- (2010) Appl. Phys. Lett. , vol.96 , pp. 262109
- Park, J.S.¹ Kim, T.S.² Son, K.S.³ Lee, K.⁴ Maeng, W.⁵ Kim, H.⁶ Kim, E.S.⁷ Park, K.⁸ Seon, J.⁹ Choi, W.¹⁰

8
- 78649291990
- 10.1063/1.3513400
- J. Y. Kwon, J. S. Jung, K. S. Son, K. Lee, J. S. Park, T. S. Kim, J. Park, R. Choi, J. K. Jeong, B. Koo, Appl. Phys. Lett., 97, 183503 (2010). 10.1063/1.3513400
- (2010) Appl. Phys. Lett. , vol.97 , pp. 183503
- Kwon, J.Y.¹ Jung, J.S.² Son, K.S.³ Lee, K.⁴ Park, J.S.⁵ Kim, T.S.⁶ Park, J.⁷ Choi, R.⁸ Jeong, J.K.⁹ Koo, B.¹⁰

9
- 78649446577
- 10.1109/LED.2010.2073439
- K. H. Ji, J. Kim, Y. Mo, J. H. Jeong, S. Yang, C. Hwang, S. K. Park, M. Ryu, S. Lee, and J. K. Jeong, IEEE Electron Device Lett., 31, 1404 (2010). 10.1109/LED.2010.2073439
- (2010) IEEE Electron Device Lett. , vol.31 , pp. 1404
- Ji, K.H.¹ Kim, J.² Mo, Y.³ Jeong, J.H.⁴ Yang, S.⁵ Hwang, C.⁶ Park, S.K.⁷ Ryu, M.⁸ Lee, S.⁹ Jeong, J.K.¹⁰

10
- 77957701589
- 10.1149/1.3483787
- K. H. Ji, J. Kim, H. Y. Jung, S. Y. Park, Y. Mo, J. H. Jeong, J. Kwon, M. Ryu, S. Y. Lee, T. Choi, J. Electrochem. Soc., 157, H983 (2010). 10.1149/1.3483787
- (2010) J. Electrochem. Soc. , vol.157 , pp. 983
- Ji, K.H.¹ Kim, J.² Jung, H.Y.³ Park, S.Y.⁴ Mo, Y.⁵ Jeong, J.H.⁶ Kwon, J.⁷ Ryu, M.⁸ Lee, S.Y.⁹ Choi, T.¹⁰

11
- 78751560976
- 10.1063/1.3541783
- J. H. Kim, U. K. Kim, Y. J. Chung, J. S. Jung, S. H. Ra, H. S. Jung, and C. S. Hwang, Appl. Phys. Lett., 98, 023507 (2011). 10.1063/1.3541783
- (2011) Appl. Phys. Lett. , vol.98 , pp. 023507
- Kim, J.H.¹ Kim, U.K.² Chung, Y.J.³ Jung, J.S.⁴ Ra, S.H.⁵ Jung, H.S.⁶ Hwang, C.S.⁷

12
- 0034187380
- 10.1116/1.591472
- J. Robertson, J. Vac. Sci. Technol. B, 18, 3 (2000). 10.1116/1.591472
- (2000) J. Vac. Sci. Technol. B , vol.18 , pp. 3
- Robertson, J.¹

13
- 41649120938
- Modeling of amorphous InGaZn O4 thin film transistors and their subgap density of states
- DOI 10.1063/1.2857463
- H. Hsieh, T. Kamiya, K. Nomura, H. Hosono, and C. Wu, Appl. Phys. Lett., 92, 133503 (2008). 10.1063/1.2857463 (Pubitemid 351483707)
- (2008) Applied Physics Letters , vol.92 , Issue.13 , pp. 133503
- Hsieh, H.-H.¹ Kamiya, T.² Nomura, K.³ Hosono, H.⁴ Wu, C.-C.⁵

14
- 0027906763
- 10.1016/0022-3093(93)91125-M
- M. F. Plass, J. Ristein, and L. Ley, J. Non-Cryst. Solids, 164, 829 (1993). 10.1016/0022-3093(93)91125-M
- (1993) J. Non-Cryst. Solids , vol.164 , pp. 829
- Plass, M.F.¹ Ristein, J.² Ley, L.³

15
- 71649105231
- 10.1016/j.tsf.2009.01.156
- D.-Y. Cho, J. Song, C. S. Hwang, W. S. Choi, T. W. Noh, J. Y. Kim, H. G. Lee, B. G. Park, S. Y. Cho, S. J. Oh, Thin Solid Films, 518, 1079 (2009). 10.1016/j.tsf.2009.01.156
- (2009) Thin Solid Films , vol.518 , pp. 1079
- Cho, D.-Y.¹ Song, J.² Hwang, C.S.³ Choi, W.S.⁴ Noh, T.W.⁵ Kim, J.Y.⁶ Lee, H.G.⁷ Park, B.G.⁸ Cho, S.Y.⁹ Oh, S.J.¹⁰

16
- 69749084941
- 10.1063/1.3204028
- J. B. You, X. W. Zhang, H. P. Song, J. Ying, Y. Gue, A. L. Yang, Z. G. Yin, N. F. Chen, and Q. S. Zhu, J. Appl. Phys., 106, 043709 (2009). 10.1063/1.3204028
- (2009) J. Appl. Phys. , vol.106 , pp. 043709
- You, J.B.¹ Zhang, X.W.² Song, H.P.³ Ying, J.⁴ Gue, Y.⁵ Yang, A.L.⁶ Yin, Z.G.⁷ Chen, N.F.⁸ Zhu, Q.S.⁹

17
- 44349136836
- Subgap states in transparent amorphous oxide semiconductor, In-Ga-Zn-O, observed by bulk sensitive x-ray photoelectron spectroscopy
- DOI 10.1063/1.2927306
- K. Nomura, T. Kamiya, H. Yanagi, E. Ikenaga, K. Yang, K. Kobayashi, M. Hirano, and H. Hosono, Appl. Phys. Lett., 92, 202117 (2008). 10.1063/1.2927306 (Pubitemid 351733899)
- (2008) Applied Physics Letters , vol.92 , Issue.20 , pp. 202117
- Nomura, K.¹ Kamiya, T.² Yanagi, H.³ Ikenaga, E.⁴ Yang, K.⁵ Kobayashi, K.⁶ Hirano, M.⁷ Hosono, H.⁸

18
- 77955317360
- 10.1021/jp1038305
- D.-Y. Cho, J. H. Kim, U. K. Kim, Y. J. Chung, J. Song, C. S. Hwang, J. Lee, and S. Oh, J. Phys. Chem. C, 114, 11962 (2010). 10.1021/jp1038305
- (2010) J. Phys. Chem. C , vol.114 , pp. 11962
- Cho, D.-Y.¹ Kim, J.H.² Kim, U.K.³ Chung, Y.J.⁴ Song, J.⁵ Hwang, C.S.⁶ Lee, J.⁷ Oh, S.⁸

19
- 79955984697
- 2 insulators on silicon
- DOI 10.1063/1.1447006
- V. V. Afanas'ev and A. Stesmans, Appl. Phys. Lett., 80, 1261 (2002). 10.1063/1.1447006 (Pubitemid 34180545)
- (2002) Applied Physics Letters , vol.80 , Issue.7 , pp. 1261
- Afanas'Ev, V.V.¹ Stesmans, A.²

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.