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Volumn 96, Issue 26, 2010, Pages

The influence of SiOx and SiNx passivation on the negative bias stability of Hf-In-Zn-O thin film transistors under illumination

(12) Park, Joon Seok a Kim, Tae Sang a Son, Kyoung Seok a Lee, Kwang Hee a Maeng, Wan Joo a Kim, Hyun Suk a Kim, Eok Su a Park, Kyung Bae a Seon, Jong Baek a Choi, Woong a Ryu, Myung Kwan a Lee, Sang Yoon a

a Samsung Advanced Institute of Technology (SAIT) (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BOTTOM GATE; BULK DEFECTS; DIELECTRIC INTERFACE; FIELD-EFFECT MOBILITIES; HYDROGEN INCORPORATION; INDIUM ZINC OXIDES; NEGATIVE BIAS; NITRIDE GROWTH; SILICON NITRIDE PASSIVATION; STRETCHED EXPONENTIAL; SUBTHRESHOLD SWING; TIME EVOLUTIONS; WHITE LIGHT;

HAFNIUM; HAFNIUM OXIDES; INDIUM; PASSIVATION; SEMICONDUCTOR GROWTH; SILICON NITRIDE; THIN FILM TRANSISTORS; THIN FILMS; ZINC; ZINC OXIDE;

SILICON OXIDES;

EID: 77954325555 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3435482 Document Type: Article

Times cited : (88)

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