Improvement of photo-induced negative bias stability of oxide thin film transistors by reducing the density of sub-gap states related to oxygen vacancies

Applied Physics Letters

Volumn 102, Issue 12, 2013, Pages

  Son, Kyoung Seok ^a   Seok Park, Joon ^a   Sang Kim, Tae ^a   Kim, Hyun Suk ^a   Seo, Seok Jun ^a   Kim, Sun Jae ^a   Baek Seon, Jong ^a   Hwan Ji, Kwang ^b   Kyeong Jeong, Jae ^b   Kwan Ryu, Myung ^a   Lee, Sangyoon ^a  

^a Samsung Advanced Institute of Technology (SAIT)   (South Korea)

^b Inha University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEAL TREATMENTS; INDIUM-ZINC-OXIDE FILMS; LIGHT ILLUMINATION; OXIDE THIN-FILM TRANSISTORS; OXYGEN AMBIENT; STRETCHED EXPONENTIAL; THRESHOLD VOLTAGE DEGRADATION; THRESHOLD VOLTAGE SHIFTS;

LIGHT ABSORPTION; OXIDE FILMS; THIN FILMS; THRESHOLD VOLTAGE;

THIN FILM TRANSISTORS;

EID: 84875931980     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4794419     Document Type: Article

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