High-quality polycrystalline Si TFTs fabricated on stainless-steel foils by using sputtered Si films

IEEE Transactions on Electron Devices

Volumn 49, Issue 5, 2002, Pages 820-825

  Serikawa, Tadashi ^a   Omata, Fujio ^a  

^a NTT CORPORATION   (Japan)

Author keywords

Low temperature process; Polycrystalline Si; Sputtering; Stainless steel; Thin film transistor

Indexed keywords

CRYSTALLIZATION; EXCIMER LASERS; HYDROGENATION; LIQUID CRYSTAL DISPLAYS; LOW TEMPERATURE OPERATIONS; POLYCRYSTALLINE MATERIALS; POLYSILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SILICA; SPUTTER DEPOSITION; STAINLESS STEEL; THIN FILMS;

GLOW DISCHARGE SPUTTERING; SILICON FILMS; STAINLESS STEEL FOILS;

THIN FILM TRANSISTORS;

EID: 0036564698     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.998590     Document Type: Article

References (23)

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