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Electrochemical and Solid-State Letters

Volumn 13, Issue 9, 2010, Pages

Large Photoresponse in Amorphous In-Ga-Zn-O and Origin of Reversible and Slow Decay

(5) Lee, Dong Hee a Kawamura, Ken Ichi a Nomura, Kenji a Kamiya, Toshio a Hosono, Hideo a

a TOKYO INSTITUTE OF TECHNOLOGY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS OXIDE SEMICONDUCTORS; CONTINUOUS WAVES; MOBILITY-LIFETIME PRODUCTS; OPTOELECTRONIC APPLICATIONS; PHOTO-REDUCTION; PHOTOCARRIER LIFETIMES; PHOTOCURRENT DECAY; PHOTOCURRENT MEASUREMENT; PHOTORESPONSES; PHYSICAL DATA; TIME CONSTANTS;

ACTIVATION ENERGY; ZINC;

AMORPHOUS SILICON;

EID: 77954735967 PISSN: 10990062 EISSN: None Source Type: Journal
DOI: 10.1149/1.3460302 Document Type: Article

Times cited : (75)

References (23)

1
- 33644610569
- NATUAS 0028-0836
- K. Nomura, H. Ohta, A. Takagi, T. Kamiya, M. Hirano, and H. Hosono, Nature (London) NATUAS 0028-0836, 488, 432 (2004).
- (2004) Nature (London) , vol.488 , pp. 432
- Nomura, K.¹ Ohta, H.² Takagi, A.³ Kamiya, T.⁴ Hirano, M.⁵ Hosono, H.⁶

2
- 41649088917
- IELEEJ 0916-8524. 10.1093/ietele/e90-c.11.2105
- M. Ito, M. Kon, N. Ikeda, M. Ishizaki, Y. Ugajin, and N. Sekine, IEICE Trans. Electron. IELEEJ 0916-8524, E90, 2105 (2007). 10.1093/ietele/e90-c.11. 2105
- (2007) IEICE Trans. Electron. , vol.90 , pp. 2105
- Ito, M.¹ Kon, M.² Ikeda, N.³ Ishizaki, M.⁴ Ugajin, Y.⁵ Sekine, N.⁶

3
- 55149104462
- DTPSDS 0003-966X. 10.1889/1.3069591
- J. K. Jeong, J. H. Jeong, J. H. Choi, J. S. Im, S. H. Kim, H. W. Yang, K. N. Kang, K. S. Kim, T. K. Ahn, H. -J. Chung, SID Int. Symp. Digest Tech. Papers DTPSDS 0003-966X, 39, 1 (2008). 10.1889/1.3069591
- (2008) SID Int. Symp. Digest Tech. Papers , vol.39 , pp. 1
- Jeong, J.K.¹ Jeong, J.H.² Choi, J.H.³ Im, J.S.⁴ Kim, S.H.⁵ Yang, H.W.⁶ Kang, K.N.⁷ Kim, K.S.⁸ Ahn, T.K.⁹ Chung, H.-J.¹⁰

4
- 54549120323
- DTPSDS 0003-966X. 10.1889/1.3069740
- J. -H. Lee, D. -H. Kim, D. -J. Yang, S. -Y. Hong, K. -S. Yoon, P. -S. Hong, C. -O. Jeong, H. -S. Park, S. Y. Kim, S. K. Lim, SID Int. Symp. Digest Tech. Papers DTPSDS 0003-966X, 39, 625 (2008). 10.1889/1.3069740
- (2008) SID Int. Symp. Digest Tech. Papers , vol.39 , pp. 625
- Lee, J.-H.¹ Kim, D.-H.² Yang, D.-J.³ Hong, S.-Y.⁴ Yoon, K.-S.⁵ Hong, P.-S.⁶ Jeong, C.-O.⁷ Park, H.-S.⁸ Kim, S.Y.⁹ Lim, S.K.¹⁰

5
- 59649110307
- JJAPA5 0021-4922. 10.1143/JJAP.48.010203
- K. Takechi, M. Nakata, T. Eguchi, H. Yamaguchi, and S. Kaneko, Jpn. J. Appl. Phys. JJAPA5 0021-4922, 48, 010203 (2009). 10.1143/JJAP.48.010203
- (2009) Jpn. J. Appl. Phys. , vol.48 , pp. 010203
- Takechi, K.¹ Nakata, M.² Eguchi, T.³ Yamaguchi, H.⁴ Kaneko, S.⁵

6
- 77957718620
- JSIDE8 1071-0922
- T. -C. Fung, C. -S. Chuang, K. Nomura, H. -P. D. Shieh, H. Hosono, and J. Kanicky, J. Soc. Inf. Disp. JSIDE8 1071-0922, 9, 4 (2008).
- (2008) J. Soc. Inf. Disp. , vol.9 , pp. 4
- Fung, T.-C.¹ Chuang, C.-S.² Nomura, K.³ Shieh, H.-P.D.⁴ Hosono, H.⁵ Kanicky, J.⁶

7
- 77954724883
- H. D. Kim, J. -S. Park, Y. G. Mo, and S. S. Kim, Digest of International Meeting on Information Display 2009, p. 35 (2009).
- (2009) Digest of International Meeting on Information Display 2009 , pp. 35
- Kim, H.D.¹ Park, J.-S.² Mo, Y.G.³ Kim, S.S.⁴

8
- 56249144477
- APPLAB 0003-6951. 10.1063/1.3020714
- K. Nomura, T. Kamiya, H. Ohta, M. Hirano, and H. Hosono, Appl. Phys. Lett. APPLAB 0003-6951, 93, 192107 (2008). 10.1063/1.3020714
- (2008) Appl. Phys. Lett. , vol.93 , pp. 192107
- Nomura, K.¹ Kamiya, T.² Ohta, H.³ Hirano, M.⁴ Hosono, H.⁵

9
- 33744460748
- Amorphous oxide semiconductors for high-performance flexible thin-film transistors
- DOI 10.1143/JJAP.45.4303
- K. Nomura, A. Takagi, T. Kamiya, H. Ohta, M. Hirano, and H. Hosono, Jpn. J. Appl. Phys., Part 1 JAPNDE 0021-4922, 45, 4303 (2006). 10.1143/JJAP.45.4303 (Pubitemid 43804578)
- (2006) Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers , vol.45 , Issue.5 B , pp. 4303-4308
- Nomura, K.¹ Takagi, A.² Kamiya, T.³ Ohta, H.⁴ Hirano, M.⁵ Hosono, H.⁶

10
- 65649106511
- PSSABA 0031-8965. 10.1002/pssa.200881303
- T. Kamiya, K. Nomura, and H. Hosono, Phys. Status Solidi A PSSABA 0031-8965, 206, 860 (2009). 10.1002/pssa.200881303
- (2009) Phys. Status Solidi A , vol.206 , pp. 860
- Kamiya, T.¹ Nomura, K.² Hosono, H.³

11
- 56249132738
- ZZZZZZ 1610-1634. 10.1002/pssc.200779300
- T. Kamiya, K. Nomura, M. Hirano, and H. Hosono, Phys. Status Solidi C ZZZZZZ 1610-1634, 5, 3098 (2008). 10.1002/pssc.200779300
- (2008) Phys. Status Solidi C , vol.5 , pp. 3098
- Kamiya, T.¹ Nomura, K.² Hirano, M.³ Hosono, H.⁴

12
- 77649122278
- IJDTAL 1551-319X. 10.1109/JDT.2009.2021582
- T. Kamiya, K. Nomura, and H. Hosono, J. Disp. Technol. IJDTAL 1551-319X, 5, 273 (2009). 10.1109/JDT.2009.2021582
- (2009) J. Disp. Technol. , vol.5 , pp. 273
- Kamiya, T.¹ Nomura, K.² Hosono, H.³

13
- 44349136836
- Subgap states in transparent amorphous oxide semiconductor, In-Ga-Zn-O, observed by bulk sensitive x-ray photoelectron spectroscopy
- DOI 10.1063/1.2927306
- K. Nomura, T. Kamiya, H. Yanagi, E. Ikenaga, K. Yang, K. Kobayashi, M. Hirano, and H. Hosono, Appl. Phys. Lett. APPLAB 0003-6951, 92, 202117 (2008). 10.1063/1.2927306 (Pubitemid 351733899)
- (2008) Applied Physics Letters , vol.92 , Issue.20 , pp. 202117
- Nomura, K.¹ Kamiya, T.² Yanagi, H.³ Ikenaga, E.⁴ Yang, K.⁵ Kobayashi, K.⁶ Hirano, M.⁷ Hosono, H.⁸

14
- 0020802464
- Photoconductivity and dark conductivity of hydrogenated amorphous silicon
- DOI 10.1016/0038-1098(83)90502-1
- W. Beyer and B. Hoheisel, Solid State Commun. SSCOA4 0038-1098, 47, 573 (1983). 10.1016/0038-1098(83)90502-1 (Pubitemid 14453031)
- (1983) Solid State Communications , vol.47 , Issue.7 , pp. 573-576
- Beyer, W.¹ Boheisel, B.²

15
- 0026082397
- PMABDJ 1364-2812. 10.1080/01418639108224442
- J. Kocka, C. E. Nebel, and C. -D. Abel, Philos. Mag. B PMABDJ 1364-2812, 63, 221 (1991). 10.1080/01418639108224442
- (1991) Philos. Mag. B , vol.63 , pp. 221
- Kocka, J.¹ Nebel, C.E.² Abel, C.-D.³

16
- 0242348724
- JSMEEV 0957-4522. 10.1023/A:1026189912090
- R. Brüggemann, J. Mater. Sci.: Mater. Electron. JSMEEV 0957-4522, 14, 629 (2003). 10.1023/A:1026189912090
- (2003) J. Mater. Sci.: Mater. Electron. , vol.14 , pp. 629
- Brüggemann, R.¹

17
- 0032209219
- JAPIAU 0021-8979. 10.1063/1.368746
- S. A. Studenikin, N. Golego, and M. Cocivera, J. Appl. Phys. JAPIAU 0021-8979, 84, 5001 (1998). 10.1063/1.368746
- (1998) J. Appl. Phys. , vol.84 , pp. 5001
- Studenikin, S.A.¹ Golego, N.² Cocivera, M.³

18
- 0029293201
- JAPIAU 0021-8979. 10.1063/1.358582
- H. Naito and M. Okuda, J. Appl. Phys. JAPIAU 0021-8979, 77, 3541 (1995). 10.1063/1.358582
- (1995) J. Appl. Phys. , vol.77 , pp. 3541
- Naito, H.¹ Okuda, M.²

19
- 33845397959
- Properties of a hole trap in n-type hexagonal GaN
- DOI 10.1063/1.1433935
- P. Muret, A. Philippe, E. Monroy, E. Munoz, B. Beaumont, F. Omnes, and P. Gibart, J. Appl. Phys. JAPIAU 0021-8979, 91, 2998 (2002). 10.1063/1.1433935 (Pubitemid 34598765)
- (2002) Journal of Applied Physics , vol.91 , Issue.5 , pp. 2998
- Muret, P.¹ Philippe, A.² Monroy, E.³ Munoz, E.⁴ Beaumont, B.⁵ Omnes, F.⁶ Gibart, P.⁷

20
- 33646801605
- SSTEET 0268-1242. 10.1088/0268-1242/21/6/001
- K. Moazzami, T. E. Murphy, J. D. Phillips, M. C.-K. Cheung, and A. N. Cartwright, Semicond. Sci. Technol. SSTEET 0268-1242, 21, 717 (2006). 10.1088/0268-1242/21/6/001
- (2006) Semicond. Sci. Technol. , vol.21 , pp. 717
- Moazzami, K.¹ Murphy, T.E.² Phillips, J.D.³ Cheung, M.C.-K.⁴ Cartwright, A.N.⁵

21
- 33744677520
- PSSABA 0031-8965, In press. [DOI: 10.1022/pssa.200983772]
- T. Kamiya, K. Nomura, and H. Hosono, Phys. Status Solidi A PSSABA 0031-8965, In press. [DOI: 10.1022/pssa.200983772]
- Phys. Status Solidi A
- Kamiya, T.¹ Nomura, K.² Hosono, H.³

22
- 33846374741
- PLRBAQ 0556-2805. 10.1103/PhysRevB.75.035212
- K. Nomura, T. Kamiya, H. Ohta, T. Uruga, M. Hirano, and H. Hosono, Phys. Rev. B PLRBAQ 0556-2805, 75, 035212 (2007). 10.1103/PhysRevB.75.035212
- (2007) Phys. Rev. B , vol.75 , pp. 035212
- Nomura, K.¹ Kamiya, T.² Ohta, H.³ Uruga, T.⁴ Hirano, M.⁵ Hosono, H.⁶

23
- 42349089548
- Origin of subthreshold swing improvement in amorphous indium gallium zinc oxide transistors
- DOI 10.1149/1.2903209
- J. H. Jeong, H. W. Yang, J. -S. Park, J. K. Jeong, Y. -G. Mo, H. D. Kim, J. Song, and C. S. Hwang, Electrochem. Solid-State Lett. ESLEF6 1099-0062, 11, H157 (2008). 10.1149/1.2903209 (Pubitemid 351555816)
- (2008) Electrochemical and Solid-State Letters , vol.11 , Issue.6
- Jeong, J.H.¹ Yang, H.W.² Park, J.-S.³ Jeong, J.K.⁴ Mo, Y.-G.⁵ Kim, H.D.⁶ Song, J.⁷ Hwang, C.S.⁸

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