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Volumn 46, Issue 5, 2013, Pages

Role of incorporated hydrogen on performance and photo-bias instability of indium gallium zinc oxide thin film transistors

(12) Kim, Hyo Jin a Park, Se Yeob a Jung, Hong Yoon a Son, Byeong Geun a Lee, Chang Kyu a Lee, Chul Kyu a Jeong, Jong Han b Mo, Yeon Gon b Son, Kyoung Seok b Ryu, Myung Kwan b Lee, Sangyoon b Jeong, Jae Kyeong a

a Inha University (South Korea)

b Samsung Advanced Institute of Technology (SAIT) (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

COMPLEX DEFECTS; FIELD-EFFECT MOBILITIES; HYDROGEN CONCENTRATION; HYDROGEN INCORPORATION; INDIUM GALLIUM ZINC OXIDES; INTERSTITIAL HYDROGEN; NEGATIVE BIAS; SHALLOW DONORS; STATE DISTRIBUTIONS; THIN-FILM TRANSISTOR (TFTS);

AMORPHOUS SEMICONDUCTORS; HYDROGEN;

THIN FILM TRANSISTORS;

EID: 84872562229 PISSN: 00223727 EISSN: 13616463 Source Type: Journal
DOI: 10.1088/0022-3727/46/5/055104 Document Type: Article

Times cited : (83)

References (32)

1
- 9744248669
- Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
- DOI 10.1038/nature03090
- Nomura K, Ohta H, Takagi A, Kamiya T and Hosono H 2004 Nature 432 488 (Pubitemid 39585210)
- (2004) Nature , vol.432 , Issue.7016 , pp. 488-492
- Nomura, K.¹ Ohta, H.² Takagi, A.³ Kamiya, T.⁴ Hirano, M.⁵ Hosono, H.⁶

2
- 33748795083
- 4 channel fabricated by room temperature rf-magnetron sputtering
- DOI 10.1063/1.2353811
- Yabuta H, Sano M, Abe K, Aiba T, Den T, Kumomi H, Nomura K, Kamiya T and Hosono H 2006 Appl. Phys. Lett. 89 112123 (Pubitemid 44403788)
- (2006) Applied Physics Letters , vol.89 , Issue.11 , pp. 112123
- Yabuta, H.¹ Sano, M.² Abe, K.³ Aiba, T.⁴ Den, T.⁵ Kumomi, H.⁶ Nomura, K.⁷ Kamiya, T.⁸ Hosono, H.⁹

3
- 33846070644
- Investigating the stability of zinc oxide thin film transistors
- DOI 10.1063/1.2425020
- Cross R B M and Souza M M De 2006 Appl. Phys. Lett. 89 263513 (Pubitemid 46058083)
- (2006) Applied Physics Letters , vol.89 , Issue.26 , pp. 263513
- Cross, R.B.M.¹ De Souza, M.M.²

4
- 37549040163
- 10.1063/1.2825422 0003-6951 263508
- Vygranenko Y, Wang K and Nathan A 2007 Appl. Phys. Lett. 91 263508
- (2007) Appl. Phys. Lett. , vol.91 , Issue.26
- Vygranenko, Y.¹ Wang, K.² Nathan, A.³

5
- 38549145327
- Bias stress stability of indium gallium zinc oxide channel based transparent thin film transistors
- DOI 10.1063/1.2824758
- Suresh A and Muth J F 2008 Appl. Phys. Lett. 92 033502 (Pubitemid 351160654)
- (2008) Applied Physics Letters , vol.92 , Issue.3 , pp. 033502
- Suresh, A.¹ Muth, J.F.²

6
- 67650474594
- 10.1063/1.3159831 0003-6951 013502
- Nomura K, Kamiya T, Hirano M and Hosono H 2009 Appl. Phys. Lett. 95 013502
- (2009) Appl. Phys. Lett. , vol.95 , Issue.1
- Nomura, K.¹ Kamiya, T.² Hirano, M.³ Hosono, H.⁴

7
- 78149458396
- 10.1063/1.3503971 0003-6951 173506
- Chowdhury M D H, Migliorato P and Jang J 2010 Appl. Phys. Lett. 97 173506
- (2010) Appl. Phys. Lett. , vol.97 , Issue.17
- Chowdhury, M.D.H.¹ Migliorato, P.² Jang, J.³

8
- 52949097961
- 10.1063/1.2990657 0003-6951 123508
- Jeong J K, Yang H W, Jeong J H, Mo Y G and Kim H D 2008 Appl. Phys. Lett. 93 123508
- (2008) Appl. Phys. Lett. , vol.93 , Issue.12
- Jeong, J.K.¹ Yang, H.W.² Jeong, J.H.³ Mo, Y.G.⁴ Kim, H.D.⁵

9
- 71949092733
- 10.1063/1.3272015 0003-6951 232106
- Lee K H, Jung J S, Son K S, Park J S, Kim T S, Choi R, Jeong J K, Kwon J Y, Koo B and Lee S 2009 Appl. Phys. Lett. 95 232106
- (2009) Appl. Phys. Lett. , vol.95 , Issue.23
- Lee, K.H.¹ Jung, J.S.² Son, K.S.³ Park, J.S.⁴ Kim, T.S.⁵ Choi, R.⁶ Jeong, J.K.⁷ Kwon, J.Y.⁸ Koo, B.⁹ Lee, S.¹⁰

10
- 78649446577
- 10.1109/LED.2010.2073439 0741-3106
- Ji K H, Kim J I, Mo Y G, Jeong J H, Yang S, Hwang C S, Park S H K, Ryu M K, Lee S Y and Jeong J K 2010 IEEE Electron Device Lett. 31 1404
- (2010) IEEE Electron Device Lett. , vol.31 , Issue.12 , pp. 1404
- Ji, K.H.¹ Kim, J.I.² Mo, Y.G.³ Jeong, J.H.⁴ Yang, S.⁵ Hwang, C.S.⁶ Park, S.H.K.⁷ Ryu, M.K.⁸ Lee, S.Y.⁹ Jeong, J.K.¹⁰

11
- 78649291990
- 10.1063/1.3513400 0003-6951 183503
- Kwon J Y et al 2010 Appl. Phys. Lett. 97 183503
- (2010) Appl. Phys. Lett. , vol.97 , Issue.18
- Kwon, J.Y.¹

12
- 84861321784
- 10.1039/c2jm30242j 0959-9428
- Yang B S, Park S, Oh S, Kim Y J, Jeong J K, Hwang C S and Kim H J 2012 J. Mater. Chem. 22 10994
- (2012) J. Mater. Chem. , vol.22 , Issue.22 , pp. 10994
- Yang, B.S.¹ Park, S.² Oh, S.³ Kim, Y.J.⁴ Jeong, J.K.⁵ Hwang, C.S.⁶ Kim, H.J.⁷

13
- 79952687049
- 10.1063/1.3564882 0003-6951 103509
- Ji K H, Kim J I, Jung H Y, Park S Y, Choi R, Kim U K, Hwang C S, Lee D, Hwang H and Jeong J K 2011 Appl. Phys. Lett. 98 103509
- (2011) Appl. Phys. Lett. , vol.98 , Issue.10
- Ji, K.H.¹ Kim, J.I.² Jung, H.Y.³ Park, S.Y.⁴ Choi, R.⁵ Kim, U.K.⁶ Hwang, C.S.⁷ Lee, D.⁸ Hwang, H.⁹ Jeong, J.K.¹⁰

14
- 84859798477
- 10.1063/1.3702794 0003-6951 152108
- Wu C Y, Cheng H C, Wang C L, Liao T C, Chiu P C, Tsai C H, Fang C H and Lee C C 2012 Appl. Phys. Lett. 100 152108
- (2012) Appl. Phys. Lett. , vol.100 , Issue.15
- Wu, C.Y.¹ Cheng, H.C.² Wang, C.L.³ Liao, T.C.⁴ Chiu, P.C.⁵ Tsai, C.H.⁶ Fang, C.H.⁷ Lee, C.C.⁸

15
- 77956252679
- 10.1063/1.3432445 0003-6951 213511
- Yang S, Cho D H, Ryu M K, Park S H K, Hwang C S, Jang J and Jeong J K 2010 Appl. Phys. Lett. 96 213511
- (2010) Appl. Phys. Lett. , vol.96 , Issue.21
- Yang, S.¹ Cho, D.H.² Ryu, M.K.³ Park, S.H.K.⁴ Hwang, C.S.⁵ Jang, J.⁶ Jeong, J.K.⁷

16
- 70349668804
- 10.1063/1.3232179 0003-6951 123502
- Lee J, Park J S, Pyo Y S, Lee D B, Kim E H, Stryakhilev D, Kim T W, Jin D U and Mo Y G 2009 Appl. Phys. Lett. 95 123502
- (2009) Appl. Phys. Lett. , vol.95 , Issue.12
- Lee, J.¹ Park, J.S.² Pyo, Y.S.³ Lee, D.B.⁴ Kim, E.H.⁵ Stryakhilev, D.⁶ Kim, T.W.⁷ Jin, D.U.⁸ Mo, Y.G.⁹

17
- 84872588823
- Jeong J K and Mo Y G unpublished
- Jeong, J.K.¹ Mo, Y.G.²

18
- 34249697083
- High mobility bottom gate InGaZnO thin film transistors with Si Ox etch stopper
- DOI 10.1063/1.2742790
- Kim M, Jeong J H, Lee H J, Ahn T K, Shin H S, Park J S, Jeong J K, Mo Y G and Kim H D 2007 Appl. Phys. Lett. 90 212114 (Pubitemid 46828080)
- (2007) Applied Physics Letters , vol.90 , Issue.21 , pp. 212114
- Kim, M.¹ Jeong, J.H.² Lee, H.J.³ Ahn, T.K.⁴ Shin, H.S.⁵ Park, J.-S.⁶ Jeong, J.K.⁷ Mo, Y.-G.⁸ Kim, H.D.⁹

19
- 77949731627
- 10.1063/1.3357431 0003-6951 102107
- Sung S Y, Choi J H, Han U B, Lee K C, Lee J H, Kim J J, Lim W, Pearton S J, Norton D P and Heo Y W 2010 Appl. Phys. Lett. 96 102107
- (2010) Appl. Phys. Lett. , vol.96 , Issue.10
- Sung, S.Y.¹ Choi, J.H.² Han, U.B.³ Lee, K.C.⁴ Lee, J.H.⁵ Kim, J.J.⁶ Lim, W.⁷ Pearton, S.J.⁸ Norton, D.P.⁹ Heo, Y.W.¹⁰

20
- 70449730669
- 10.1088/0034-4885/72/12/126501 0034-4885 126501
- Janotti A and Walle C G Van de 2009 Rep. Prog. Phys. 72 126501
- (2009) Rep. Prog. Phys. , vol.72 , Issue.12
- Janotti, A.¹ Van De Walle, C.G.²

21
- 33744461825
- First-principles study of the diffusion of hydrogen in ZnO
- DOI 10.1103/PhysRevLett.96.205504
- Wardle M G, Goss J P and Briddon P R 2006 Phys. Rev. Lett. 96 205504 (Pubitemid 43804572)
- (2006) Physical Review Letters , vol.96 , Issue.20 , pp. 205504
- Wardle, M.G.¹ Goss, J.P.² Briddon, P.R.³

22
- 0242605620
- 10.1201/9780203911778
- Kagan Y and Andry P W E 2003 Thin Film Transistors (New York: Dekker) chapter 3 p 87
- (2003) Thin Film Transistors , pp. 87
- Kagan, Y.¹ Andry, P.W.E.²

23
- 0023325141
- Meyer-neldel rule in field-effect measurements and the microscopic prefactor of the conducitivity in a-Si:H
- DOI 10.1016/0038-1098(87)90074-3
- Schumacher R, Thomas P, Weber K and Fuhs W 1987 Solid State Commum. 62 15 (Pubitemid 18580902)
- (1987) Solid State Communications , vol.62 , Issue.1 , pp. 15-17
- Schumacher, R.¹ Thomas, P.² Weber, K.³ Fuhs, W.⁴

24
- 25344478865
- 10.1016/0022-3093(87)90126-8 0022-3093
- Overhof H 1987 J. Non-Cryst. Solids 97/98 539
- (1987) J. Non-Cryst. Solids , vol.97-98 , pp. 539
- Overhof, H.¹

25
- 67349287542
- 10.1109/TED.2009.2019157 0018-9383
- Chen C, Abe K, Kumomi H and Kanicki J 2009 IEEE Trans. Electron Dev. 56 1177
- (2009) IEEE Trans. Electron Dev. , vol.56 , Issue.6 , pp. 1177
- Chen, C.¹ Abe, K.² Kumomi, H.³ Kanicki, J.⁴

26
- 77957701589
- 10.1149/1.3483787 0013-4651
- Ji K H, Kim J I, Mo Y G, Jeong J H, Kwon J Y, Ryu M K, Lee S and Jeong J K 2010 J. Electrochem. Soc. 157 H983
- (2010) J. Electrochem. Soc. , vol.157 , Issue.11 , pp. 983
- Ji, K.H.¹ Kim, J.I.² Mo, Y.G.³ Jeong, J.H.⁴ Kwon, J.Y.⁵ Ryu, M.K.⁶ Lee, S.⁷ Jeong, J.K.⁸

27
- 21844451632
- 4
- DOI 10.1016/j.tsf.2004.11.223, PII S0040609004018899
- Takagi A, Nomura K, Ohta H, Yanagi H, Kamiya T, Hirano M and Hosono H 2005 Thin Solid Films 486 38 (Pubitemid 40952537)
- (2005) Thin Solid Films , vol.486 , Issue.1-2 , pp. 38-41
- Takagi, A.¹ Nomura, K.² Ohta, H.³ Yanagi, H.⁴ Kamiya, T.⁵ Hirano, M.⁶ Hosono, H.⁷

28
- 0003923615
- Hummel R E 2000 Electronic Properties of Materials 3rd edn (Berlin: Springer) chapter 7 p 82
- (2000) Electronic Properties of Materials , pp. 82
- Hummel, R.E.¹

29
- 0034508133
- + implant for MOSFETs
- DOI 10.1109/55.887467
- Lee J, Cheng K, Chen Z, Hess K, Lyding J W, Kim Y K, Lee H S, Kim Y W and Suh K P 2000 IEEE Electron Device Lett. 21 221 (Pubitemid 32075243)
- (2000) IEEE Electron Device Letters , vol.21 , Issue.12 , pp. 566-568
- Lee, P.S.¹ Pey, K.L.² Mangelinck, D.³ Ding, J.⁴ Wee, A.T.S.⁵ Chan, L.⁶

30
- 78149382528
- 1468-6996 044305
- Kamiya T, Nomura K and Hosono H 2010 Sci. Technol. Adv. Mater. 11 044305
- (2010) Sci. Technol. Adv. Mater. , vol.11 , Issue.4
- Kamiya, T.¹ Nomura, K.² Hosono, H.³

31
- 35148897661
- 10.1103/PhysRevB.76.165202 1098-0121 B 165202
- Janotti A and Walle C G Van de 2007 Phys. Rev. B 76 165202
- (2007) Phys. Rev. , vol.76 , Issue.16
- Janotti, A.¹ Van De Walle, C.G.²

32
- 79951993680
- 0268-1242 034008
- Jeong J K 2011 Semicond. Sci. Technol. 26 034008
- (2011) Semicond. Sci. Technol. , vol.26 , Issue.3
- Jeong, J.K.¹

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