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Volumn 98, Issue 12, 2011, Pages

Role of ZrO2 incorporation in the suppression of negative bias illumination-induced instability in Zn-Sn-O thin film transistors

(9) Yang, Bong Seob a Huh, Myung Soo a,b Oh, Seungha a Lee, Ung Soo a Kim, Yoon Jang a Oh, Myeong Sook a Jeong, Jae Kyeong c Hwang, Cheol Seong a Kim, Hyeong Joon a

a Seoul National University (South Korea)

b Samsung Mobile Display Company Limited (South Korea)

c Inha University (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CHANNEL LAYERS; COSPUTTERING; MULTICOMPONENTS; NEGATIVE BIAS; OXYGEN VACANCY DEFECTS; PHOTOINDUCED TRANSITION; THRESHOLD VOLTAGE SHIFTS;

GALLIUM; OXYGEN; OXYGEN VACANCIES; THIN FILM TRANSISTORS; THIN FILMS; THRESHOLD VOLTAGE; TRANSPORT PROPERTIES; VACANCIES; ZINC; ZIRCONIUM; ZIRCONIUM ALLOYS;

TIN;

EID: 79953906760 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3571448 Document Type: Article

Times cited : (69)

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