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Volumn 94, Issue 13, 2009, Pages

Amorphous In-Ga-Zn-O coplanar homojunction thin-film transistor

(8) Sato, Ayumu a Abe, Katsumi a Hayashi, Ryo a Kumomi, Hideya a Nomura, Kenji b Kamiya, Toshio b,c Hirano, Masahiro b,c Hosono, Hideo b,c

a CANON INC (Japan)

b JAPAN SCIENCE AND TECHNOLOGY AGENCY (Japan)

c TOKYO INSTITUTE OF TECHNOLOGY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHANNEL RESISTANCES; CONTACT REGIONS; DIRECT DEPOSITIONS; DRAIN RESISTANCES; FABRICATION PROCESS; FIELD-EFFECT MOBILITIES; HOMO JUNCTIONS; HYDROGENATED SILICONS; IDEAL OHMIC CONTACTS; LOW-PARASITIC; PROTECTION LAYERS; SEMICONDUCTIVE;

OHMIC CONTACTS; SEMICONDUCTING ORGANIC COMPOUNDS; SEMICONDUCTING SILICON COMPOUNDS; SILICON NITRIDE; THIN FILM DEVICES; THIN FILM TRANSISTORS; ZINC;

AMORPHOUS SILICON;

EID: 64149113300 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3112566 Document Type: Article

Times cited : (183)

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