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Volumn 157, Issue 11, 2010, Pages

The effect of density-of-state on the temperature and gate bias-induced instability of InGaZnO thin film transistors

(11) Ji, Kwang Hwan a Kim, Ji In a Jung, Hong Yoon a Park, Se Yeob a Mo, Yeon Gon b Jeong, Jong Han b Kwon, Jang Yeon b Ryu, Myung Kwan b Lee, Sang Yoon b Choi, Rino a Jeong, Jae Kyeong a

a Inha University (South Korea)

b Samsung Advanced Institute of Technology (SAIT) (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BULK TRAPS; ENERGY DISTRIBUTIONS; EXPERIMENTAL OBSERVATION; GATE BIAS; GATE INSULATOR; GATE-BIAS STRESS; GATED DEVICES; MEYER-NELDEL RULES; TEMPERATURE STRESS; TOTAL DENSITY OF STATE;

SILICON NITRIDE; STABILITY; THIN FILMS;

THIN FILM TRANSISTORS;

EID: 77957701589 PISSN: 00134651 EISSN: None Source Type: Journal
DOI: 10.1149/1.3483787 Document Type: Article

Times cited : (64)

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